IRFB3806 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB3806PbFIRFS3806PbF
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IRFB3806 -IRFB3806PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
It High Efficiency Synchronous Rectification in
o Uninterruptible Power Supply
PD - 97310
IRFl33806PbF
IRFS3806PbF
IRFSL3806PbF
HEXFET® Power MOSFET
0 High Speed Power Switching D V 60V
0 Hard Switched and High Frequency Circuits DSS
RDSM) typ. 12.6mQ
max. 15.8mQ
Benefits
0 Improved Gate, Avalanche and Dynamic s ID 43A
dv/dt Ruggedness
0 Fully Characterized Capacitance and D D
Avalanche SOA , , D
0 Enhanced body diode dV/dt and dI/dt "i1itiiii' ' / (tiii):,
Capability . 1K“ ES 1118 _ yis
TO-220AB D2Pak TO-262
IRFB3806PbF IRFS3806PbF IRFSL3806PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGS @ 10V 43
lo @ To = 100°C Continuous Drain Current, Ves @ 10V 31 A
G, Pulsed Drain Current co 170
PD @Tc = 25°C Maximum Power Dissipation 71 W
Linear Derating Factor 0.47 W/°C
Ves Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 24 V/ns
T, Operating Junction and -55 to + 175 I
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 73 mJ
|AR Avalanche Current co 25 A
EAR Repetitive Avalanche Energy (9 7.1 m J
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.12
Recs Case-to-Sink, Flat Greased Surface, TO-220 0.50 - °CNV
ReJA Junction-to-Ambient, TO-220 ®o - 62
Ra, Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
02/29/08
IRFB/S/SL3806PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V Vss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.075 - V/°C Reference to 25°C, lo = 5mA0)
RDS(on) Static Drain-to-Source On-Resistance - 12.6 15.8 mn Vss = 10V, ID = 25A co
V650,.) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 50pA
loss Drain-to-Source Leakage Current - - 2O pA Ihos = 60V, Vss = 0V
- - 250 Vos = 48V, VGS = 0V, Tr, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 41 - - S VDS = 10V, ID = 25A
Qg Total Gate Charge - 22 30 nC ID = 25A
Qgs Gate-to-Source Charge - 5.0 - Ihos = 30V
di Gate-to-Drain ("Miller") Charge - 6.3 - Vas = 10V ©
stm Total Gate Charge Sync. (Qg - di) - 28.3 - ID = 25A, VDS =0V, Vss = 10V
Rem) Internal Gate Resistance - 0.79 - Q
td(on) Turn-On Delay Time - 6.3 - ns VDD = 39V
t, Rise Time - 40 - ID = 25A
tdm) Turn-Off Delay Time - 49 - Rs = 209
t, Fall Time - 47 - vGS = 10V ©
Ciss Input Capacitance - 1150 - Vss = 0V
Coss Output Capacitance - 130 - Ihos = 50V
Crss Reverse Transfer Capacitance - 67 - pF f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)@ - 190 - Vss = 0V, Vos = 0V to 60V ©
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 230 - I/ss = 0V, Vos = 0V to 60V s
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 43 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 170 integral reverse G
(Body Diode) a) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 25A, Vss = 0V ©
trr Reverse Recovery Time - 22 33 ns TJ = 25°C I/s, = 51 V,
- 26 39 Tu = 125°C IF = 25A
Q,, Reverse Recovery Charge - 17 26 nC TJ = 25°C di/dt = 100NUS ©
- 24 36 TJ = 125°C
IRRM Reverse Recovery Current - 1.4 - A T J = 25°C
u, Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by max. junction S Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. as Cass while VDs is rising from O to 80% I/ross.
© Limited by TJmax, starting TJ = 25°C, L = 0.23mH
RG = 259, lAs = 25A, Veg =10V. Part not recommended for
use above this value.
© Isro S 25A, di/dt S 1580A/ps, VDD S V(BR)DSS! To S 175°C.
© Pulse width I 400ps; duty cycle I 2%.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
COSS while Vos is rising from 0 to 80% Voss.
© When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Re is measured at TJ approximately 90°C.
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