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IRFB3607-IRFB3607PBF-IRFS3607
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 97308C
TlFl33607PbF
IRFS3607PbF
Applications IRFSL3607PbF
. High Efficiency Synchronous Rectification in
SMPS HEXFET® Power MOSFET
Uninterruptible Power Supply
High Speed Power Switching D VDSS 75V
Hard Switched and High Frequency Circuits RDS(on) typ. 7.34mQ
G max. 9.0mf2
Benefits s ID 80A
0 Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
. Fully Characterized Capacitance and D
Avalanche SOA ' . D ii6t)
q Enhanced body diode dV/dt and dI/dt ' ff; (ijjiii,sc) "et, (s,
. . “ R ", v V "s
Capability ‘\ Elks 12’s N, . is
. D G G
TO-220AB D2Pak TO-262
lfRFB3607PbF IRFS3607PbF IRFSL3607PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 80(D
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 56(D A
IDM Pulsed Drain Current © 310
PD @TC = 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.96 w/oc
Vss Gate-to-Source Voltage 1: 20 V
T, Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1 .6mm from case)
Mounting torque, 6-32 or M3 screw 10lb- in (1 AN. m)
Avalanche Characteristics
EAsrrhermanyr,mitea Single Pulse Avalanche Energy © 120 mJ
IAR Avalanche Current (D 46 A
EAR Repetitive Avalanche Energy s 14 ml
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rea: Junction-to-Case © - 1.045
Recs Case-to-Sink, Flat Greased Surface, TO-220 0.50 - °C/W
RBJA Junction-to-Ambient, TO420 - 62
RSJA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
01/20/12
IRFB/S/SL3607PbF International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.096 - VPC Reference to 25°C, ID = 5mA©
Roam) Static Drain-to-Source On-Resistance - 7.34 9.0 m9 I/ss = 10V, ID = 46A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos = l/ss, ID = 100pA
loss Drain-to-Source Leakage Current - - 2O pA Vos = 75V, Vas = 0V
- - 250 VDS = 60V, Vas = 0V, Tu =125°C
lass Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -1OO I/ss = -20V
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 115 - - S Vos = 50V, b = 46A
a, Total Gate Charge - 56 84 nC ID = 46A
99 Gate-to-Source Charge - 13 - Vos = 38V
qu Gate-to-Drain ("Miller") Charge - 16 - VGS = 10V ©
stm Total Gate Charge Sync. (Qg - di) - 4O - ID = 46A, VDS =OV, l/ss = 10V
Rem, Internal Gate Resistance -- 0.55 - Q
tom Turn-On Delay Time - 16 - ns l/or, = 49V
t, Rise Time - 110 - b=46A
tdon Turn-Off Delay Time - 43 - RG = 6.89
t, Fall Time - 96 - I/ss = 10V co
Ciss Input Capacitance - 3070 - pF Vss = 0V
Coss Output Capacitance - 280 - Vos = 50V
Crss Reverse Transfer Capacitance - 130 - f = 1 .OMHz
Coss eff. (ER) Effective Output Capacitance (Energy Related). - 380 - VGS = 0V, VDS = 0V to 60V
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 610 - I/ss = 0V, VDS = 0V to 60V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 800D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 310 integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 46A, Vss = 0V Cs)
dv/dt Peak Diode Recovery - 27 - V/ns TJ = 175°C, ls = 46A, Vos = 75V ©
trr Reverse Recovery Time - 33 50 ns T, = 25°C VR = 64V,
- 39 59 T, = 125°C IF = 46A
l Reverse Recovery Charge - 32 48 nC T, = 25°C di/dt = 100A/ps s
- 47 71 To = 125°C
IRRM Reverse Recovery Current - 1.9 - A T, = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
© ISD S 46A, di/dt S 1920A/ps, VDD S V(BR)DSSv Tu S 175°C.
S Pulse width S 400ps; duty cycle S 2%.
© COSS eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% Voss.
temperature. © Coss eff. (ER) is a fixed capacitance that gives the same energy as
© Limited by TJmax, starting To = 25°C, L = 0.12mH Coss while VDS is rising from Oto 80% VDSS-
Re = 259 IAS = 46A l/ss =10V. Part not recommended for use When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
above this value. © R0 is measured at Tu approximately 90°C.
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