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IRFB3507PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 95935B
lRFB3507PbF
IRFS3507PbF
llRFSL3507PbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply D V 75V
0 High Speed Power Switching DSS
0 Hard Switched and High Frequency Circuits RDS(on) typ. 7.0mn
o Lead-Free G max. 8.8mQ
s ID 97A
Benefits .1 ,.
q Improved Gate, Avalanche and Dynamic dV/dt 'R)j(i)' s1fjiic) 'mril'ifr'l'_
Ruggedness I'' . il S ". _.,."" 'S
o Fully Characterized Capacitance and Avalanche V . ‘DS GD T VD
SOA G G
q Enhanced body diode dV/dt and dI/dt Capability TO-220AB D2Pak TO-262
IRFB3507PbF IRFS3507PbF IRFSL3507PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ TC = 25°C Continuous Drain Current, Vas © 10V 9700 A
ID © Tc = 100°C Continuous Drain Current, Vas @ 10V 690D
G, Pulsed Drain Current © 390
PD @Tc = 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
I/as Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery GD 5.0 V/ns
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAs (Thermallylimited) Single Pulse Avalanche Energy © 280 mJ
IAR Avalanche Current CD See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy (9 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.77
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
Rem Junction-to-Ambient, TO-220 © - 62
RGJA Junction-to-Ambient (PCB Mount) , D2Pak (DQ) - 40
1
01/20/06
IRFB/S/SL3507PbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V l/ss = 0V, ID = 250PA
AV
Roswn) Static Drain-to-Source On-Resistance - 7.0 8.8 mg; Vas = 10V, ID = 58A s
VGSW Gate Threshold Voltage 2.0 - 4.0 V l/os = VGS, ID = 100pA
IDSS Drain-to-Source Leakage Current - - 20 pA Vos = 75V, Vss = 0V
- - 250 Vos = 75V, Vas = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA l/es = 20V
Gate-to-Source Reverse Leakage - - -200 l/ss = -20V
Rs Gate Input Resistance - 1.3 - Q f: 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 86 - - S Vos = 50V, b = 58A
Qg Total Gate Charge - 88 130 nC ID = 58A
Qgs Gate-to-Source Charge - 24 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 36 - Vas = 10V s
tom Turn-On Delay Time - 20 - ns VDD = 48V
t, Rise Time - 81 - ID = 58A
td(off) Turn-Off Delay Time - 52 - Ra = 5.652
t, Fall Time - 49 - l/tss = 10V s
Ciss Input Capacitance - 3540 - pF l/ss = 0V
Coss Output Capacitance - 340 - Vos = 50V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 460 - l/tss = 0V, I/os = 0V to 60V CD, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 520 - Vss = OV, vDS = OV to 60V (9, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 97C) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 390 A integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 58A, Vss = 0V ©
trr Reverse Recovery Time - 37 56 ns T J = 25°C VR = 64V,
- 45 68 Tu = 125°C IF = 58A
Q,, Reverse Recovery Charge - 32 48 nC Tu = 25°C di/dt = 100A/ps ©
- 51 77 T J = 125°C
IRRM Reverse Recovery Current - 1.7 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction co Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A. as Coss while VDS is rising from 0 to 80% Voss.
© Repetitive rating; pulse width limited by max. junction C) Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Cass while Vos is rising from 0 to 80% Voss.
© Limited by Tumax, starting TJ = 25°C, L = 0.17mH, When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
Re = 259., IAS = 58A, Vas =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. © Ro is measured at Tu approximately 90°C.
CD ISD s: 58A, di/dt s 390A/us, VDD s V(BR)DSS, T, s: 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
2
