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IRFB3507 -IRFS3507
HEXFET Power MOSFET
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
o Uninterruptible Power Supply
PD - 96903A
lRFB3507
llRFS3507
llRFSL3507
HEXFET® Power MOSFET
o High Speed Power Switching Voss 75V
0 Hard Switched and High Frequency Circuits RDS(on) typ. 7.0mn
Benefits G max. 8.8mQ
0 Improved Gate, Avalanche and Dynamic dV/dt s Ir: 97A
Ruggedness
o Fully Characterized Capacitance and Avalanche
0 Enhanced body diode dV/dt and dl/dt Capability .. 'jii):t: 14iit tifii)s))
"s, l \511, . "
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB3507 IRFS3507 |RFSL3507
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas © 10V 970) A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 690D
G, Pulsed Drain Current © 390
PD @Tc = 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 WPC
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery G) 5.0 V/ns
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10llrin (1 .1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy © 280 mJ
IAn Avalanche Current OD See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.77
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °CNV
ReJA Junction-to-Ambient, To-220 © - 62
ReJA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
11/04/04
lRFB3507/lRFS3507/lRFSL3507
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - 7.0 8.8 mg I/ss = 10V, ID = 58A ©
VGSW Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 100pA
loss Drain-to-Source Leakage Current - - 2O pA Vos = 75V, l/es = 0V
- - 250 Vos = 75v, Vss = OV, Tu = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Rs Gate Input Resistance - 1.3 - Q f= 1MHz, open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 86 - - S Vos = 50V, lo = 58A
q, Total Gate Charge - 88 130 nC ID = 58A
Qgs Gate-to-Source Charge - 24 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 36 - I/ss = 10V (S)
tom Turn-On Delay Time - 20 - ns VDD = 48V
t, Rise Time - 81 - [D = 58A
tom Turn-Off Delay Time - 52 - Re = 5.69
t, Fall Time - 49 - Vss = 10V S
Ciss Input Capacitance - 3540 - pF I/ss = 0V
cu, Output Capacitance - 340 - Vos = 50V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 460 - I/ss = 0V, Vos = 0V to 60V OD, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 520 - I/ss = 0V, Vos = 0V to 60V co, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 97(D A MOSFET symbol a
(Body Diode) showing the
ISM Pulsed Source Current - - 390 A integral reverse G
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 v To = 25°C, ls = 58A, Vas = OV ©
trr Reverse Recovery Time - 37 56 ns To = 25°C I/n = 64V,
- 45 68 Tu = 125°C IF = 58A
Qrr Reverse Recovery Charge - 32 48 nC Tu = 25°C di/dt = 100A/ps co
- 51 77 T J = 125°C
IRRM Reverse Recovery Current - 1.7 - A T, = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CO Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.17mH,
Rs = 259, Me = 58A, Vas =10V. Part not recommended for use
above this value.
© ISD S 58A, di/dt S 390A/ps, VDD S V(BR)DSS: Tu S 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
as Coss while Vros is rising from O to 80% V035.
Cr) Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss-
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Ro is measured at T: approximately 90°C.
