IRFB3307ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB3307ZPbFIRFS3307ZPbF
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IRFB3307ZPBF-IRFS3307Z-IRFS3307ZTRRPBF-IRFSL3307ZPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
. High Efficiency Synchronous Rectification in
Uninterruptible Power Supply
97214D
IRFl33307ZPbF
IRFS3307ZPbF
llRFSL3307ZPbF
HEXFET® Power MOSFET
High Speed Power Switching D VDSS 75V
Hard Switched and High Frequency Circuits RDS(on) typ. 4.6mQ
max. 5.8mQ
. G ID (Silicon Limited) 128ACO
Benefits I . . 120A
0 Improved Gate, Avalanche and Dynamic s D (Package Limited)
dv/dt Ruggedness
. Fully Characterized Capacitance and D D D
Avalanche SOA ... l ' I I iiiiiir,
. Phary.yd body diode dV/dt and dI/dt "ieii,(ci2'i K ' "h, 'tsi, ttiy,
Capability . 'Nt 'r:-, s I s \“138
.Go G "G
TO-220AB D2Pak TO-262
IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 1280D
|D @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 900) A
lo @ To = 25°C Continuous Drain Current, Vas © 10V (Wire Bond Limited) 120
bs, Pulsed Drain Current © 512
PD @Tc = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
I/ss Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery GD 6.7 V/ns
T, Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf-in (1.1N-m)
Avalanche Characteristics
EAS(Thermawrrmited) Single Pulse Avalanche Energy co 140 mJ
IAR Avalanche Current CD See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy s m J
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.65
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
ROJA Junction-to-Ambient, TO-220 © - 62
ReJA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
08/19/11
International
IRFB/S/SL3307ZPbF
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 75 - - V Ves = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.094 - V/°C Reference to 25°C, ID = 5mA©
R0340”, Static Drain-to-Source On-Resistance - 4.6 5.8 mg I/ss = 10V, ID = 75A G)
Vegan) Gate Threshold Voltage 2.0 - 4.0 v Vos = I/ss, ID = 150PA
Ream) Internal Gate Resistance - 0.70 - Q
loss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, Vss = 0V
- - 250 Vos = 75V, Ves = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 320 - - S VDS = 50V, ID = 75A
Qg Total Gate Charge - 79 110 nC ID = 75A
Qgs Gate-to-Source Charge - 19 - Vos = 38V
di Gate-to-Drain ("Miller") Charge - 24 - I/ss = 10V ©
stnc Total Gate Charge Sync. (Qg - di) - 55 - ID = 75A, Vos =0V, Vas = 10V
tion) Turn-On Delay Time - 15 - ns VDD = 49V
t, Rise Time - 64 - ID = 75A
tom Turn-Off Delay Time - 38 - Rs = 2.69
t, Fall Time - 65 - I/ss = 10V s
Ciss Input Capacitance - 4750 - pF Vas = 0V
Coss Output Capacitance - 420 - I/os = 50V
C,ss Reverse Transfer Capacitance - 190 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)C - 440 - Vas = 0V, Vos = 0V to 60V
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 410 - Vas = 0V, l/ns = 0V to 60V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 1280) A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current - - 512 integral reverse G
(Body Diode) ©© p-n junction diode.
Ita, Diode Forward Voltage - - 1.3 v TJ = 25°C, ls = 75A, I/ss = OV s
t,, Reverse Recovery Time - 33 50 ns TJ = 25°C VF; = 64V,
- 39 59 Tu = 125°C IF = 75A
l Reverse Recovery Charge - 42 63 n0 T,, = 25°C di/dt = 100A/ps ©
- 56 84 T J = 125°C
IRRM Reverse Recovery Current - 2.2 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction G) Iso f 75A, di/dt s 1570A/ps, V00 3 V(BR)DSS: Tu 3 175°C.
temperature. Bond wire current limit is 120A. Note that current (S) Pulse width S 400us; duty cycle S 2%.
limitations arising from heating of the device leads may occur with © Cass eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as C055 while Vos is rising from 0 to 80% Voss-
© Repetitive rating; pulse width limited by max. junction co Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while VDs is rising from 0 to 80% VDSS-
© Limited by Tumax, starting TJ = 25°C, L = 0.050mH When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
Rs = 259, MS = 75A, I/ss =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. © Ro is measured at Tu approximately 90°C.
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