IRFS3307 ,HEXFET Power MOSFET IRFB3307IRFS3307IRFSL3307
IRFS3307Z ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsIRFSL3307ZPbFHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETU ..
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IRFB3307-IRFS3307
HEXFET Power MOSFET
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD-96901A
lRFB3307
llRFS3307
llRFSL3307
HEXFET® Power MOSFET
o Uninterruptible Power Supply D V 75V
o High Speed Power Switching DSS
0 Hard Switched and High Frequency Circuits RDS(on) typ. 5.0mf2
Benefits G max. 6.3mQ
0 Improved Gate, Avalanche and Dynamic dV/dt s ID 130A
Ruggedness
o Fully Characterized Capacitance and Avalanche
0 Enhanced body diode dV/dt and dl/dt Capability .. 'jii):t: 14iit tifii)s))
"s, l \511, . V
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB3307 IRFS3307 |RFSL3307
Absolute Maximum Ratings
Symbol Parameter Max. Units
k, @ To = 25°C Continuous Drain Current, l/ss @ 10V 1300) A
ID @ To = 100°C Continuous Drain Current, I/ss @ 10V 91 CD
los, Pulsed Drain Current © 510
PD @Tc = 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.6 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 11 V/ns
TJ Operating Junction and -55 to + 175 'C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1.1N'm)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 270 mJ
IAR Avalanche Current CD See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy co mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.61
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °CNV
ReJA Junction-to-Ambient, TO-220 © - 62
RM Junction-to-Ambient (PCB Mount) , DZPak ©© - 40
1
11/04/04
lRFB3307/lRFS3307/lRFSL3307
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
meoss Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.069 - V/°C Reference to 25°C, ID = 1mA©
RDSM) Static Drain-to-Source On-Resistance 5.0 6.3 mg Vos = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 150pA
loss Drain-to-Source Leakage Current - 20 pA Vos = 75V, Vas = 0V
- - 250 Vos = 75V, Vas = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
Re Gate Input Resistance - 1.5 - Q f= 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 98 - - S VDS = 50V, ID = 75A
q, Total Gate Charge - 120 180 nC lo = 75A
Qgs Gate-to-Source Charge - 35 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 46 - Vos = 10V (9
tum Turn-On Delay Time - 26 - ns VDD = 48V
tr Rise Time - 120 - ID = 75A
tam) Turn-Off Delay Time - 51 - FIG = 3.99
t, Fall Time - 63 - Vss = 10V S
Ciss Input Capacitance - 5150 - pF Vas = 0V
cu, Output Capacitance - 460 - VDS = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related) - 570 - Vss = 0V, VDs = 0V to 60V C), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 700 - Vas = 0V, Vos = 0V to 60V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1300) A MOSFET symbol a
(Body Diode) showing the
ISM Pulsed Source Current - - 510 A integral reverse G
(Body Diode) C) p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V T J = 25°C, ls = 75A, Vss = 0V s
t,, Reverse Recovery Time - 38 57 ns TJ = 25°C VR = 64V,
- 46 69 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 65 98 nC Tu = 25°C di/dt = 100A/ps ©
- 86 130 T J = 125°C
IRRM Reverse Recovery Current - 2.8 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CO Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmaX, starting Tu = 25°C, L = 0.096mH
Rs = 259, MS = 75A, Vas =10V. Part not recommended for use
above this value.
© ISD S 75A, di/dt S 530A/ps, VDD S V(BR)DSS: Tu S 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
as Coss while Vros is rising from O to 80% V035.
Cr) Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss-
When mounted on 1" square PCB (FR-4 or (3-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Ro is measured at T: approximately 90°C.
