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IRFB3306 -IRFB3306PBF-IRFSL3306PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
1523 Rectifier
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Applications
HEXFET© Power MOSFET
. High Efficiency Synchronous Rectification in SMPS D Voss 6011
o Uninterru tible Power Su I
. p . T y Rosmn) typ. 3.3mf2
. High Speed Power Switching 4 2 Q
. Hard Switched and High Frequency Circuits " max. . m
G . . . .
Ir, (Silicon Limited) 160A co
o Improved Gate, Avalanche and Dynamic dV/dt S D (Package Limited)
Ruggedness
q Fully Characterized Capacitance and Avalanche D D D
SOA "ktiiiix ikiii)
Enhanced body diode dV/dt and dl/dt Capability N5iit) \. 'Rr'i"f)
Lead-Free N .‘b {G03 .. 'DS
RoHS Compliant, Halogen-Free G G
TO-220AB D2Pak TO-262
IRFB3306PbF IRFS3306PbF IRFSL3306PbF
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Farm Quantity
IRFB3306 PbF TO-220 Tu be 50 IRFB3306PbF
IRFSL3306PbF T0262 Tu be 50 IRFS L3306PbF
Tube 50 IRFS3306PbF
IRFS3306PbF D2Pak Tape and Reel Left 800 IRFS3306TRLPbF
Tape and Reel Right 800 IRFS3306TRRPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
lo © TC = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 1601
ID © Tc = 100°C Continuous Drain Current, VGS © 10V (Silicon Limited) 110CO A
|D © Tc = 25°C Continuous Drain Current, I/ss © 10V (Wire Bond Limited) 120
G, Pulsed Drain Current 2) 620
PD OTC; = 25''C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/“C
Vas Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery C) 14 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb. in (1.1 N. m)
Avalanche Characteristics
E As fThermall limited) Single Pulse Avalanche Energy al 184 mJ
|AR Avalanche Current 21 See Fig. 14, 15, 22a, 22b, A
E AR Repetitive Avalanche Energy CS) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Riuc Junction-to-Case S) - 0.65
F19CS Case-to-Sink, Flat Greased Surface , TO-220 0.50 - o C /W
Rm Junction-to-Ambient, TO-220 S) - 62
Ram Junction-to-Ambient (PCB Mount) , D2Pak (3)6) - 40
fl ©2014 International Rectifier Submit Datasheet Feedback April 24, 2014
Static @ T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V Vas = 0V, ID = 250pA
AmeDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 5mAC8
RDSW, Static Drain-to-Source On-Resistance 3.3 4.2 mn Vas = 10V, ID = 75A s
VGSM Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
IDSS Drain-to-Source Leakage Current - - 20 pA VDS = 60V, l/ss = 0V
- - 250 Vos = 48V, VGS = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vss = -20V
Rs Internal Gate Resistance - 0.7 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 230 - - S Vos = 50V, ID = 75A
q, Total Gate Charge - 85 120 nC ID = 75A
Qgs Gate-to-Source Charge - 20 - VDS =30V
di Gate-to-Drain ("Miller") Charge - 26 Vas = 10V s
stnc Total Gate Charge Sync. (Qg - di) - 59 - ID = 75A, Vos =0V, Vas = 10V
tom Turn-On Delay Time - 15 - ns Va, = 30V
t, Rise Time - 76 - ID = 75A
tdmm Turn-Off Delay Time - 40 - Ra = 2.79
t, Fall Time - 77 - Vss = 10V ©
Ciss Input Capacitance - 4520 - pF Vas = 0V
Coss Output Capacitance - 500 - VDS = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 720 - Vas = 0V, I/os = 0V to 48V C), See Fig. 11
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 880 - Vas = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1600) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 620 A integral reverse G
(Body Diode) C) p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V CO
tr, Reverse Recovery Time - 31 ns TJ = 25°C l/n = 51V,
- 35 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 34 nC TJ = 25°C di/dt = 100/Vps ©
- 45 T J = 125°C
IRRM Reverse Recovery Current - 1.9 - A T J = 25°C
tim Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © ISD 3 75A, di/dt s 1400A/ps, VDD s: V(BR)DSS, To f 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
(S) Pulse width f 400ps; duty cycle S 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from O to 80% Vass.
C) Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
© Limited by TJmax, starting TJ = 25°C, L = 0.04mH
Rs = 259, MS = 96A, Vas =10V. Part not recommended for use
Coss while VDS is rising from O to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
above this value.
© Re is measured at Tu approximately 90°C
©2014 International Rectifier
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April 24, 2014
