IRFB3207ZG ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification inSMPSDV 75VDSSUnint ..
IRFB3207ZGPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB3207ZGPbF
IRFB3207ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV 75VHigh Efficiency Synchronous Rectification in DSSR typ.SMPS 3.3m
IRFB3207ZG-IRFB3207ZGPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
. High Efficiency Synchronous Rectification in
PD - 96201
IRFl33207ZGPbF
HEXFET® Power MOSFET
SMPS D Vnss 75V
Ini.nttrrupti.b.le Power .Sup-ply RDS(°n) typ. 3.3mQ
High Speed Power Switching
Hard Switched and High Frequency Circuits max. 4.1mQ
ID (Silicon Limited) 170AOD
s ID (Package Limited) 120A
Benefits
0 Improved Gate, Avalanche and Dynamic 0,.
dv/dt Ruggedness " 1 f.
. Fully Characterized Capacitance and "it,).;',""'': x
Avalanche SOA "s..'" ":a s
q Enhanced body diode dV/dt and dI/dt l
Ca ilit
Legiire: TO-220AB
IRFB3207ZGPbF
Halogen-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
lr) © To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 170CO
ID @ To = 100°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 120CO A
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V (Wire Bond Limited) 120
G, Pulsed Drain Current © 670
PD @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery Ci) 16 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 0 C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10|bf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy © 170 mJ
IAR Avalanche Current CD See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rem Junction-to-Case - 0.50
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
ReJA Junction-to-Ambient, TO-220 - 62
12/05/08
IRFB3207ZGPbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.091 - V/°C Reference to 25°C, ID = 5mA©
RDSW) Static Drain-to-Source On-Resistance - 3.3 4.1 mg Vss = 10V, ID = 75A s
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, b = 150pA
Rem) Internal Gate Resistance - 0.8 - Q
bss Drain-to-Source Leakage Current - - 20 pA N/ss = 75V, Vss = 0V
- - 250 Vos = 75V, Vss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 280 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 120 170 ID = 75A
Qgs Gate-to-Source Charge - 27 - VDS = 38V
di Gate-to-Drain ("Miller") Charge - 33 - nC Vss = 10V s
stnc Total Gate Charge Sync. (Qg - di) - 87 - ID = 75A, Vos =0V, Vss = 10V
tri(on) Turn-On Delay Time - 20 - VDD = 49V
t, Rise Time - 68 - ID = 75A
1mm Turn-Off Delay Time - 55 - ns Rs = 2.79
t, Fall Time - 68 - Vas = 10V s
Ciss Input Capacitance - 6920 - Vas = 0V
Coss Output Capacitance - 600 - VDS = 50V
Crss Reverse Transfer Capacitance - 270 - pF f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related)© - 770 - Vas = 0V, Vos = 0V to 60V CD
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 960 - N/ss = 0V, VDS = 0V to 60V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 170© MOSFET symbol D
(Body Diode) - - A showing the
Iss, Pulsed Source Current 670 integral reverse G
(Body Diode) © - - p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V s
1,, Reverse Recovery Time - 36 54 ns T, = 25°C VR = 64V,
- 41 62 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 50 75 n0 TJ = 25°C di/dt = 100A/ps s
- 67 100 T, = 125°C
IRRM Reverse Recovery Current - 2.4 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction GD Iso S 75A, di/dt S 1730A/ps, VDD S V(BR)DSSv Tu S 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.033mH
RG = 259, IAS = 102A, Ves =1OV. Part not recommended for use
above this value.
S Pulse width S 400ps; duty cycle S 2%.
© COSS eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from O to 80% Voss-
Ro is measured at Tu approximately 90°C.
