IRFB3207PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB3207Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV 75VHigh Efficiency Synchronous Rectification in DSSR typ.SMPS 3.3m
IRFB3207PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 95708D
IRFB3207PbF
IRFS3207PbF
|RFSL3207PbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply D
0 High Speed Power Switching Voss 75V
. Hard Switched and High Frequency Circuits Riosion) typ. 3.6m!)
G max. 4dimf2
Benefits s ID 170A
o Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
0 Fully Characterized Capacitance and Avalanche
SOA itiiit: dai,),) tifii)s))
Enhanced body diode dV/dt and dl/dt Capability 'R)ji(i','' x... 'Rsirt"r1 '-/)ss,)
Lead-Free \ -‘b8 l bs ', v if
G G ‘G
TO-220AB D2Pak TO-262
IRFB3207PbF IRFS3207PbF |RFSL3207PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1700) A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1200D
IDM Pulsed Drain Current © 720
Po @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vss Gate-to-Source Voltage i 20 V
dV/dt Peak Diode Recovery (ii) 5.8 V/ns
TC, Operating Junction and -55 to + 175 "C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 910 mJ
IAR Avalanche Current C) See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R9J0 Junction-to-Case © - 0.50
Rocs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °CNV
RSJA Junction-to-Ambient, TO-220 G - 62
RBJA Junction-to-Ambient (PCB Mount) , D2Pak COO) - 40
1
03/06/06
IRF/B/S/SL3207PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.069 - V/°C Reference to 25°C, ID = 1mA©
Roam) Static Drain-to-Source On-Resistance - 3.6 4.5 mg l/ss = 10V, ID = 75A s
Vsam) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250pA
IDSS Drain-to-Source Leakage Current - - 20 pA VDS = 75V, I/ss = 0V
- - 250 Vos = 75V, VGS = 0V, T., = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Vcs = -20V
RG Gate Input Resistance - 1.2 - Q f= 1MHz, open drain
Dynamic © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 - - S Vos = 50V, ID = 75A
q, Total Gate Charge - 180 260 nC ID = 75A
Qgs Gate-to-Source Charge - 48 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 68 - I/ss = 10V (S)
tam", Turn-On Delay Time - 29 - ns Vor, = 48V
tr Rise Time - 120 - ID = 75A
tam) Turn-Off Delay Time - 68 - Rs = 2.69
t, Fall Time - 74 - I/ss = 10V (S)
Ciss Input Capacitance - 7600 - pF VGs = 0V
Coss Output Capacitance - 710 - 1has = 50V
Crss Reverse Transfer Capacitance - 390 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) C) - 920 - I/ss = 0V, Vros = 0V to 60V (ll), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 1010 - VGS = 0V, VDS = 0V to 60V (0, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1700D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 720 integral reverse G
(Body Diode) OOD p-n junction diode. S
Vs, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 75A, N/ss = 0V co
trr Reverse Recovery Time - 42 63 ns T J = 25°C VR = 64V,
- 49 74 Tu = 125°C IF = 75A
Qrr Reverse Recovery Charge - 65 98 nC Tu = 25°C di/dt = 100A/ps (S)
- 92 140 T J = 125°C
IRRM Reverse Recovery Current - 2.6 - A Tu = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A. as Coss while V93 is rising from 0 to 80% Voss-
© Repetitive rating; pulse width limited by max. junction © Coss eff. (ER) is a mted capacitance that gives the same energy as
temperature. COSS while Vros is rising from 0 to 80% Yass.
© Limited by TJmax, starting Tu = 25°C, L = 0.33mH When mounted on I" square PCB (FR-4 or G-10 Material). For recommended
Rs = 259, IAS = 75A, VGS =10V. Part not recommended for use footprint and soldering techniques refer to application note #AN-994.
above this value. © R0 is measured at To approximately 90°C.
(9 ISO I 75A, di/dt s 500A/ps, VDDS ViBR)DSS, T J: 175°C.
s Pulse width S 400ps; duty cycle S 2%.
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