IRFB3207 ,HEXFET Power MOSFETApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB3207. ,HEXFET Power MOSFET IRFB3207IRFS3207IRFSL3207
IRFB3207PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB3207Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV 75VHigh Efficiency Synchronous Rectification in DSSR typ.SMPS 3.3m
IRFB3207-IRFB3207.
HEXFET Power MOSFET
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD - 96893A
lRFB3207
llRFS3207
llRFSL3207
HEXFET® Power MOSFET
o Uninterruptible Power Supply D V 75V
o High Speed Power Switching DSS
0 Hard Switched and High Frequency Circuits Rns(on) typ. 3.6mQ
Benefits G max. 4.5mQ
0 Worldwide Best RDs(on) in TO-220 . s ID 180A
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
. Fully Characterized Capacitance and Avalanche
SOA _"s' F" dai,),) tifii)s))
. Enhanced body diode dV/dt and dl/dt Capability \‘33 \__ \{Ql '-".)ss.)
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB3207 IRFS3207 |RFSL3207
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss © 10V 1800D A
ID @ To = 100°C Continuous Drain Current, Ves © 10V 1300
IDM Pulsed Drain Current © 720
PD OTC; = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 w/oc
Vas Gate-to-Source Voltage * 20 V
dV/dt Peak Diode Recovery 9) 5.8 V/ns
T, Operating Junction and -55 to + 175 °C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10llrin (1.1N'm)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy © 910 mJ
IAR Avalanche Current OD See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case © - 0.45
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
F16 JA Junction-to-Ambient, TO-220 © - 62
Fu, Junction-to-Ambient (PCB Mount) , D2Pak 0(9) - 40
1
11/3/04
|RF/B/S/SL3207
International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
AV
RDSW) Static Drain-to-Source On-Resistance - 3.6 4.5 mo I/ss = 10V, ID = 75A CO
Vtss(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
Irsss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, Vss = 0V
- - 250 Vos = 75V, Vas = OV, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -2OO Ves = -20V
Re Gate Input Resistance - 1.2 - Q f= 1MHz, open drain
Dynamic © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 - - S Vos = 50V, ID = 75A
q, Total Gate Charge - 180 260 nC ID = 75A
Qgs Gate-to-Source Charge - 48 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 68 - Vss = 10V s
tam) Turn-On Delay Time - 29 - ns VDD = 48V
t, Rise Time - 120 - ID = 75A
tom Turn-Off Delay Time - 68 - Rs = 2.69
t, Fall Time - 74 - I/as = 101/ s
Ciss Input Capacitance - 7600 - pF I/ss = 0V
Coss Output Capacitance - 710 - Vos = 50V
C,, Reverse Transfer Capacitance - 390 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 920 - I/ss = 0V, Vos = 0V to 60V s, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 1010 - Ves = 0V, Ihas = 0V to 60V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1800) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 720 integral reverse G
(Body Diode) ©© p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V co
trr Reverse Recovery Time - 42 63 ns T J = 25°C VR = 64V,
- 49 74 T, = 125°C IF = 75A
a,, Reverse Recovery Charge - 65 98 nC TJ = 25°C di/dt = 100A/ps s
- 92 140 T J = 125°C
IRRM Reverse Recovery Current - 2.6 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CO Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmaX, starting Tu = 25°C, L = 0.33mH
Rs = 259, Me = 75A, Vas =10V. Part not recommended for use
above this value.
© ISD S 75A, di/dt S 500A/ps, VDD S V(BR)DSS: Tu S 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
as Coss while Vros is rising from O to 80% V035.
Cr) Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss-
When mounted on 1" square PCB (FR-4 or (3-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Ro is measured at T: approximately 90''C
