IRFB31N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.082Ω 31ABenefitsl Low Gate ..
IRFB3206PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications High Efficiency Synchronous RectificationDV 60VDSSin SMPSR typ.2.4m
IRFB31N20D -IRFB31N20D.-IRFB31N20DPBF-IRFS31N20D-IRFS31N20DPBF-IRFSL31N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 93805B
International IRFB31N20D
Tart Rectifier SMPS MOSFET IRFS31N20D
IRFSL31N20D
HEXFET© Power MOSFET
Applications Voss RDSM) max ID
q High frequency DC-DC converters
200V th0820 31A
Benefits
0 Low Gate-to-Drain Charge to Reduce ' ' {6”
Switching Losses tf'ih "li,);)') '
N ' 's
o Fully Characterized Capacitance Including V I.
Effective Coss to Simplify Design, (See I.
App. Note AN1001)
a Fully Characterized Avalanche Voltage
and Current
TO-220AB D2Pak TO-262
IRFB31N20D IRFS31N20D IRFSL31N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 31
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current C) 124
PD @TA = 25°C Power Dissipation © 3.1 W
PD @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.3 W/°C
Vss Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 2.1 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Typical SMPS Topologies
0 Telecom 48V Input Forward Converters
Notes C) through (D are on page 11
1
2/14/00
lRFB/lRFS/lRFSL31N20D
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
Rosmn) Static Drain-to-Source On-Resistance - - 0.082 Q VGS = 10V, ID = 18A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Ws = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 HA N/ns = 200V, VGS = 0V
- - 250 Vros = 160V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 17 - - S I/rss = 50V, ID = 18A
% Total Gate Charge - 70 110 ID = 18A
ths Gate-to-Source Charge - 18 27 n0 Vos = 160V
di Gate-to-Drain ("Miller") Charge - 33 49 VGS = 10V, Cr)
tam) Turn-On Delay Time - 16 - VDD = 100V
tr Rise Time - 38 - ns ID = 18A
Mott) Turn-Off Delay Time - 26 - Rs = 2.59
if Fall Time - 10 - RD = 5.49 ©
Ciss Input Capacitance - 2370 - VGS = 0V
Coss Output Capacitance - 390 - Vos = 25V
Crss Reverse Transfer Capacitance - 78 - pF f = 1.0MHz
Coss Output Capacitance - 2860 - VGs = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 150 - VGS = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 170 - Ves = 0V, Vos = 0V to 160V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 420 mJ
IAR Avalanche Currentc0 - 18 A
EAR Repetitive Avalanche EnergyCD - 20 mJ
Thermal Resistance
Parameter Typ. Max. Units
ch Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °CNV
ReJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 31 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 124 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25''C, Is = 18A, VGs = 0V ©
trr Reverse Recovery Time - 200 300 ns TJ = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 1.7 2.6 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
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