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IRFB3077GPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 96200
IRFl33077GPbF
HEXFET® Power MOSFET
o 1r1nttrrupti.b.le Power _Supply VDSS 75V
0 High Speed Power Switching
. Hard Switched and High Frequency Circuits RDS(on) typ. 2.8mQ
Benefits max. 3.3mQ
. Worldwide Best RDSM) in TO-220 . Ir, (Silicon Limited) 210A co
o Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Ir, (Package Limited) 120A
o Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability 0,.
Lead-Free 'xte'iij)ii't
Halogen-Free l l. s
TO-220AB
IRFB3077GPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ TC = 25°C Continuous Drain Current, N/ss @ 10V (Silicon Limited) 2100D
ID @ TC = 100°C Continuous Drain Current, Vas © 10V (Silicon Limited) 150CO
|D @ TC = 25°C Continuous Drain Current, N/ss @ 10V (Wire Bond Limited) 120 A
G, Pulsed Drain Current C) 850
PD @Tc = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
I/ss Gate-to-Source Voltage 1 20 V
dV/dt Peak Diode Recovery (ii) 2.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C) C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 200 mJ
IAR Avalanche Current CD See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RGJC Junction-to-Case - 0.402
Recs Case-to-Sink, Flat Greased Surface 0.50 - °CNV
RQJA Junction-to-Ambient - 62
1
12/05/08
|RFB3077GPbF
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.091 - V/°C Reference to 25°C, ID = 5mA©
RDSmn, Static Drain-to-Source On-Resistance - 2.8 3.3 m9 I/ss = 10V, ID = 75A S
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 V08 = 75V, Vas = 0V
- - 250 pA I/rss = 75V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 VGS = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vss = -20V
RG Gate Input Resistance - 1.2 - Q f = 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Ihas = 50V, ID = 75A
q, Total Gate Charge - 160 220 ID = 75A
Qgs Gate-to-Source Charge - 37 - nC Vos = 38V
di Gate-to-Drain ("Miller") Charge - 42 - Vos = 10V (9
ton) Turn-On Delay Time - 25 - VDD = 38V
t, Rise Time - 87 - ID = 75A
tom Turn-Off Delay Time - 69 - ns Rs = 2.19
t, Fall Time - 95 - Vss = 10V co
Ciss Input Capacitance - 9400 - Vss = 0V
COSS Output Capacitance - 820 - l/os = 50V
Crss Reverse Transfer Capacitance - 350 - pF f = 1.0MHz,See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 1090 - Vss = OV, Vos = OV to 60V co, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 1260 - Vas = 0V, VDs = 0V to 60V ©,
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 210C0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 850 integral reverse G
(Body Diode) © p-n junction diode. s
Van Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 75A, l/ss = 0V (3
in Reverse Recovery Time - 42 63 T J = 25°C VR = 64V,
- 50 75 ns Tu = 125°C IF = 75A
Q,, Reverse Recovery Charge - 59 89 Tu = 25°C di/dt = 100A/ps s
- 86 130 nC Tu = 125°C
IRRM Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.028mH
Rs = 259, IAS = 120A, Ves =1OV. Part not recommended for use
(9 Pulse width S 400ps; duty cycle f 2%.
© Cass eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from O to 80% V033.
C) Cass eff. (ER) is a fixed capacitance that gives the same energy as
Cass while VDS is rising from O to 80% Voss.
Re is measured at Tu approximately 90°C
above this value.
© ISD S 75A, di/dt S 400A/ps, VDD S V(BR)DSS, TJ S 175°C.
2
