IRFB3077PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB3077PbF
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IRFB3077 -IRFB3077PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD - 97047B
IRFB3077PbF
HEXFET® Power MOSFET
o 1ni.nttrrupti.ble Power Supply D Voss 75V
o High Speed Power Switching
0 Hard Switched and High Frequency Circuits RDS(on) typ. 2.8mQ
Benefits max. 3.3mQ
0 Worldwide Best RDs(on) in TO-220 . lr, (Silicon Limited) 210A co
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Ir, (Package Limited) 120A
. Fully Characterized Capacitance and Avalanche
. Enhanced body diode dV/dt and dl/dt Capability ll
N s" s
TO-220AB
IRFB3077PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 210(D A
lo @ To = 100°C Continuous Drain Current, Vai; @ 10V (Silicon Limited) 1500)
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V (Wire Bond Limited 120
IDM Pulsed Drain Current © 850
PD @Tc = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
l/tss Gate-to-Source Voltage A 20 V
dV/dt Peak Diode Recovery (D 2.5 V/ns
Tu Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10ltyin (1 .1N-m)
Avalanche Characteristics
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy © 200 mJ
IAR Avalanche Current CD See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy co mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case © - 0.402
Recs Case-to-Sink, Flat Greased Surface 0.50 - °CNV
RNA Junction-to-Ambient ©© - 62
1
5/2/11
|RFB3077PbF
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BH)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.091 - V/°C Reference to 25°C, ID = 5mA©
RD3(on) Static Drain-to-Source On-Resistance - 2.8 3.3 m9 Vas = 10V, ID = 75A s
Vas(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250pA
|DSS Drain-to-Source Leakage Current - - 20 pA Vos = 75V, I/ss = 0V
- - 250 Vos = 75V, I/ss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - -100 Vas = -20V
Rs Gate Input Resistance - 1.2 - n f: 1MHz, open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 160 220 nC ID = 75A
Qgs Gate-to-Source Charge - 37 - VDS = 38V
di Gate-to-Drain ("Miller") Charge - 42 - Vas = 10V co
tdmn) Turn-On Delay Time - 25 - ns VDD = 38V
t, Rise Time - 87 - ID = 75A
td(ott) Turn-Off Delay Time - 69 - Ra = 2.19
t, Fall Time - 95 - Vas = 10V (9
Ciss Input Capacitance - 9400 - pF Vss = 0V
Coss Output Capacitance - 820 - Vos = 50V
Crss Reverse Transfer Capacitance - 350 - f = 1 .OMHz
Cogs eff. (ER) Effective Output Capacitance (Energy Related)Cr) - 1090 - N/ss = 0V, VDS = 0V to 60V 0, See Fig.11
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 1260 - Vas = 0V, VDS = 0V to 60V co, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 210(D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 850 integral reverse G
(Body Diode) ©© p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vss = 0V s
trr Reverse Recovery Time - 42 63 ns T J = 25°C l/n = 64V,
- 50 75 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 59 89 n0 TJ = 25°C di/dt = 100A/ps CO
- 86 130 T J = 125°C
IRFWI Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.028mH
© Pulse width f 400ps; duty cycle S 2%.
© Cass eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vros is rising from O to 80% V035.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rs = 259, IAS = 120A, N/ss =10V. Part not recommended for use
above this value.
© ISD f 75A, di/dt S 400A/ps, VDD S V(BR)DSS, TJ f 175°C.
2
© & is measured at To approximately 90''C
