IRFB260NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56A Lead-FreeBenefit ..
IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB260NPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 95473
International SMPS MOSFET
Isak Rectifier IRFl3260NPbF
HEXFET® Power MOSFET
Applications
V R max I
q High frequency DC-DC converters DSS DS(on) D
. Lead-Free 200V 0.040Q 56A
Benefits
0 Low Gate-to-Drain Charge to Reduce Switching Losses h g.
0 Fully Characterized Capacitance Including Effective Cogs to "'i5lii'iifl-.
Simplify Design, (See App. Note AN1001) _, C" "u.)',,
0 Fully Characterized Avalanche Voltage and Current 'sic:",'
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 56
ID © Tc = 100°C Continuous Drain Current, Vas @ 10V 40 A
IDM Pulsed Drain Current CO 220
PD @Tc = 25°C Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
Ves Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © 10 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range 0(3
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Fha: Junction-to-Case - 0.40
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
Notes (D through s are on page 8
1
7/7/04
IRFl3260NPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 -- -- V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.040 Q Vas = 10V, ID = 34A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vos = 200V, Vas = 0V
- - 250 Vos = 160V, l/tas = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 29 - - S VDs = 50V, ID = 34A
Qg Total Gate Charge -- 150 220 ID = 34A
Qgs Gate-to-Source Charge - 24 37 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 67 100 Vas = 10V GD
Liam) Turn-On Delay Time - 17 - VDD = 100V
tr Rise Time - 64 - ns ID = 34A
td(0ff) Turn-Off Delay Time - 52 - Rs = 1.89
tf Fall Time - 50 - VGS = 10V ©
Ciss Input Capacitance - 4220 - VGs = 0V
Coss Output Capacitance - 580 - Vos = 25V
Crs,S Reverse Transfer Capacitance - 140 - pF f = 1.0MHz
Coss Output Capacitance - 5080 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - Vias = 0V, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 500 - Vias = 0V, VDs = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 450 mJ
IAR Avalanche Current© - 34 A
EAR Repetitive Avalanche Energy© - 38 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 56 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 220 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 34A, N/ss = 0V (9
tr, Reverse Recovery Time - 240 360 ns Tu = 25°C, V = 34A
a,, Reverse RecoveryCharge - 2.1 3.2 00 di/dt = 1OOA/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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