IRFB23N20D ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20D®HEXFET Power MOSFET
IRFB23N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.10Ω 24A Lead-FreeBenefits ..
IRFB260N ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56ABenefits Low Gate ..
IRFB260NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56A Lead-FreeBenefit ..
IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB23N20D -IRFS23N20D
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 93904A
International IRFB23N20D
TOR Rectifier SMPS MOSFET IRFS23N20D
IRFSL23N20D
HEXFET® Power MOSFET
Applications Voss RDS(on) max ID
0 High frequency DC-DC converters 200V (Hog 24A
Benefits
. Low Gate-to-Drain Charge to Reduce
Switching Losses
. Fully Characterized Capacitance Including ' tjitt o,i;,;iiiit, iii)
Effective Cogs to Simplify Design, (See Sit ', "'/ii1if/'i'',f)
App. Note AN1001) N, .s" 7 l I,
o Fully Characterized Avalanche Voltage ’
IRFB23N20D IRFS23N20D IRFSL23N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 24
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A
IDM Pulsed Drain Current C) 96
PD @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 170
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Typical SMPS Topologies
o Telecom 48V input Forward Converter
Notes CO through © are on page 11
www. irf.com 1
4/26/00
lRFB/lRFS/lRFSL23N20D
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - 0.26 - V/°C Reference to 25°C, ID = 1mA ©
Roam) Static Drain-to-Source On-Resistance - - 0.10 n VGS = 10V, ID = 14A Ci)
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA VDS = 200V, VGS = 0V
- - 250 1/ros = 160V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 A VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 n VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 13 - - S Vos = 50V, ID = 14A
09 Total Gate Charge - 57 86 ID = 14A
Qgs Gate-to-Source Charge - 14 21 nC Vros = 160V
di Gate-to-Drain ("Miller") Charge - 27 40 Yas = 10V, (96)
td(on) Turn-On Delay Time - 14 - VDD = 100V
tr Rise Time - 32 - ns [D = 14A
td(off) Turn-Off Delay Time - 26 - Rs = 4.69
tf Fall Time - 16 - l/ss = 10V ©
Ciss Input Capacitance - 1960 - VGS = 0V
Cass Output Capacitance - 300 - Vos = 25V
Crss Reverse Transfer Capacitance - 65 - pF f = 1.0MHz©
Coss Output Capacitance - 2200 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 120 - VGs = ov, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 220 - VGs = 0V, Vros = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 250 mJ
IAR Avalanche CurrentC0 - 14 A
EAR Repetitive Avalanche Energy© - 17 m]
Thermal Resistance
Parameter Typ. Max. Units
Rax: Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
iode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 24 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 96 integral reverse G
(Body Diode) C)(5) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 14A, VGS = 0V ©
trr Reverse Recovery Time - 200 300 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge - 1300 1940 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
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