IRFB23N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters 150V 0.090Ω 23ABenefitsl Low Gat ..
IRFB23N20D ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20D®HEXFET Power MOSFET
IRFB23N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.10Ω 24A Lead-FreeBenefits ..
IRFB260N ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56ABenefits Low Gate ..
IRFB260NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56A Lead-FreeBenefit ..
IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB23N15D-IRFB23N15DPBF-IRFS23N15D
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
SMPS MOSFET
PD - 93894A
IRFB23N15D
IRFS23N15D
|RFSL23N15D
HEXFET© Power MOSFET
A lications
pp. VDss RDS(on) max ID
0 High frequency DC-DC converters
150V 0.0909 23A
Benefits
0 Low Gate-to-Drain Charge to Reduce . fre'
Switching Losses itih C", d'it
0 Fully Characterized Capacitance Including '1:it'iri
Effective Goes to Simplify Design, (See I.
App. Note AN1001) 2
o Fully Characterized Avalanche Voltage Jtiig)1, w/ir/h, wc,fl'u,
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 23
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 17 A
IDM Pulsed Drain Current OD 92
Po @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 136
Linear Derating Factor 0.9 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt co 4.1 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1 .1N-m)
Typical SMPS Topologies
o Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes C) through Cr) are on page 11
1
6/29/00
lRFB/lRFS/lRFSL23N15D
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.18 - Vf'C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.090 9 N/ss = 10V, ID = 14A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDS = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 150V, VGS = 0V
- - 250 Vos = 120V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 11 - - S VDs = 25V, ID = 14A
Qg Total Gate Charge - 37 56 ID = 14A
Qgs Gate-to-Source Charge - 9.6 14 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 19 29 VGS = 10V, ©
tam...) Turn-On Delay Time - 10 - I/oo = 75V
t, Rise Time - 32 - ns lo = 14A
td(off) Turn-Off Delay Time - 18 - Rs = 5.19
tf Fall Time - 8.4 - VGs = 10V ©
Ciss Input Capacitance - 1200 - VGS = 0V
Coss Output Capacitance - 260 - Vos = 25V
Crss Reverse Transfer Capacitance - 65 - pF f = 1.0MHz©
Coss Output Capacitance - 1520 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 120 - N/ss = 0V, VDs = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 210 - Vss = 0V, Vros = 0V to 120V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 260 mJ
IAR Avalanche CurrentCD - 14 A
EAR Repetitive Avalanche Energy© - 13.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RQJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 92 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 14A, VGS = 0V (4D
tn Reverse Recovery Time - 150 220 ns Tu = 25°C, IF = 14A
Qrr Reverse RecoveryCharge - 0.8 1.2 pC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
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