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IRFB20N50K
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
araRiectifier
Applications
SMPS MOSFET
o Switch Mode Power Supply (SMPS)
o Uninterruptible Power Supply
. High Speed Power Switching
o Hard Switched and High Frequency
Circuits
Benefits
o Low Gate Charge 09 results in Simple Drive Requirement
o Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
o Fully Characterized Capacitance and Avalanche Voltage
PD - 94418
IRFB20N50K
HEXFET® Power MOSFET
RDS(on) typ. ID
0.219 20A
T -22 AB
and Current 0 0
0 Low RDS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ Tc = 100''C Continuous Drain Current, VGs @ 10V 12 A
IDM Pulsed Drain Current (D 80
Pro @Tc = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage l 30 V
dv/dt Peak Diode Recovery dv/dt © 6.9 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 ''C
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 N
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 330 mJ
IAR Avalanche Currents - 20 A
EAR Repetitive Avalanche Energy0) - 28 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rac Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
' Junction-to-Ambient - 58
4/2/02
IRFB20N50K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.61 - V/°C Reference to 25°C, lo = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.21 0.25 n VGS = 10V, ID = 12A G)
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Ws = Was, ID = 250pA
loss Drain-to-Source Leakage Current - _ 25:0 'd V: = 'eg', "ti', :21; Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs=-30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 11 - - S VDS = 50V, ID = 12A
Qg Total Gate Charge - - 110 ID = 20A
Qgs Gate-to-Source Charge - - 33 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 54 V68 = 10V, See Fig. 6 and 13 ©
tum") Turn-On Delay Time - 22 - VDD = 250V
tr Rise Time - 74 - ns ID = 20A
tam) Turn-Off Delay Time - 45 - Rs = 7.59
tf Fall Time - 33 - VGS = 10V,See Fig. 10 ©
Ciss Input Capacitance - 2870 - VGS = 0V
CDSS Output Capacitance - 320 - Vros = 25V
Crss Reverse Transfer Capacitance - 34 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3480 - Was = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 85 - VGs = 0V, Vos = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 160 - VGs = 0V, Vos = 0V to 400V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 20 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 80 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V Tu = 25°C, Is = 20A, VGs = 0V (9
trr Reverse Recovery Time - 520 780 ns T: = 25°C, IF = 20A
Qrr Reverse Recovery Charge - 5.3 8.0 PC dildt=100Alps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting TJ = 25°C, L = 1.6mH, Rs = 259,
IAs = 20A,
© ISDS 20A, di/dt S 350A/ps, VDD S V(BR)DSSI
TJs150°c
GD Pulse width 5 400ps; duty cycle 5 2%.
