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IRFB18N50K
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRIectifier
SMPS MOSFET
PD - 93926B
|RFB18N5OK
HEXFET© Power MOSFET
Applications
. Switch Mode Power Supply (SMPS) VDSS RDSion) typ. ID
0 Uninterruptible Power Supply 500V 0.269 17A
o High Speed Power Switching
. Hard Switched and High Frequency
Circuits f
Benefits :tiiiiih
q Low Gate Charge Qg results in Simple Drive Requirement
o Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
q Fully Characterized Capacitance and Avalanche Voltage
and Current TO-220AB
q Low RDS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current (D 68
Pro @Tc = 25°C Power Dissipation 220 W
Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt © 11 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °c
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 N
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 370 mJ
IAR Avalanche Current© - 17 A
EAR Repetitive Avalanche Energy© - 22 m]
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.56
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 58
1
3/29/01
IRFB18N50K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Vss = 0V, ID = 250PA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - VI°C Reference to 25''C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.26 0.29 Q VGS = 10V, ID = 10A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Ves, ID = 250pA
Koss Drain-to-Source Leakage Current - - 25500 't x3: = 'eg', x: = g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 l/cs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 6.4 - - S Vos = 50V, ID = 10A
09 Total Gate Charge - - 120 ID = 17A
Qgs Gate-to-Source Charge - - 34 n0 VDS = 400V
di Gate-to-Drain ("Miller") Charge - - 54 VGS = 10V, See Fig. 6 and 13 ©
td(0n) Turn-On Delay Time - 22 - VDD = 250V
tr Rise Time - 60 - ns ID = 17A
tdiott) Turn-Off Delay Time - 45 - Rs = 7.59
tf Fall Time - 30 - l/ss = 10V,See Fig. 10 ©
Ciss Input Capacitance - 2830 - l/ss = 0V
Coss Output Capacitance - 330 - Vos = 25V
Crss Reverse Transfer Capacitance - 38 - pF f = 1.0MHz, See Fig. 5
C055 Output Capacitance - 3310 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 93 - I/ss = 0V, Ws = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 155 - I/ss = 0V, VDs = 0V to 400V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 68 integral reverse G
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, ls = 17A, VGs = 0V ©
trr Reverse Recovery Time - 520 780 ns To = 25°C, IF = 17A
Qrr Reverse RecoveryCharge - 5.3 8.0 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by G) Pulse width 3 300ps; duty cycle s: 2%.
max. junction temperature.
© Starting To = 25°C, L = 2.5mH, Rs = 259,
IAS = 17A,
© ISDS17A,
di/dt S 149A/ps, VDD S V(BRpss,
TJs150°C
