IRFS17N20D ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.17Ω 16ABenefitsl Low Gate- ..
IRFS17N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω 16A Lead-FreeBenefits ..
IRFS17N20DTRR ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20D®HEXFET Power MOSFET
IRFS23N15D ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters 150V 0.090Ω 23ABenefitsl Low Gat ..
IRFS23N20D ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.10Ω 24ABenefitsl Low Gate- ..
IRFS23N20DPBF , SMPS MOSFET
ISL9003AIEFZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIEMZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIEMZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIENZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9005AIRFZ-T , LDO with Low ISUPPLY, High PSRR
ISL9007IUKZ , High Current LDO with Low IQ and High PSRR
IRFB17N20D-IRFS17N20D-IRFS17N20DTRR
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 93902A
Internohqrjol IRFB17N20D
TOR Rectifier SMPS MOSFET IRFS17N20D
|RFSL17N20D
HEXFET® Power MOSFET
Applications
V R max I
0 High frequency DC-DC converters DSS DS(on) D
200V 0.179 16A
Benefits
. Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including ' tjitt iii)
Effective Coss to Simplify Design, (See Sit ', V "
App. Note AN1001) N, . A, E
o Fully Characterized Avalanche Voltage .' I,
and Current
TO-220AB D2Pak TO-262
IRFB17N20D IRFS17N20D IRFSL17N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 16
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current C) 64
PD @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 140
Linear Derating Factor 0.90 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 2.7 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Typical SMPS Topologies
0 Telecom 48V input Forward Converter
Notes CO through © are on page 11
www. irf.com 1
4/26/00
lRFB/lRFS/lRFSL17N20D International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.25 _-- V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.17 n VGS = 10V, ID = 9.8A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 Vros = 160V, I/ss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 5.3 - - S VDs = 50V, ID = 9.8A
q, Total Gate Charge - 33 50 ID = 9.8A
Qgs Gate-to-Source Charge - 8.4 13 n0 Vos = 160V
di Gate-to-Drain ("Miller") Charge - 16 24 VGS = 10V, ©©
1d(on) Turn-On Delay Time - 11 - VDD = 100V
tr Rise Time - 19 - ns ID = 9.8A
toem) Turn-Off Delay Time - 18 - Rs = 5.19
tr Fall Time - 6.6 - N/ss = 10V ©
Ciss Input Capacitance - 1100 - VGS = 0V
Coss Output Capacitance - 190 - Vos = 25V
Crss Reverse Transfer Capacitance - 44 - pF f = 1.0MHz©
Coss Output Capacitance - 1340 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 76 - VGs = 0V, Vos = 160V, f = 1.0MHz
Cogs eff. Effective Output Capacitance - 130 - N/ss = 0V, Vros = 0V to 160V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 240 mJ
IAR Avalanche Current0) - 9.8 A
EAR Repetitive Avalanche Energy© - 14 m]
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .1
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - ''CIVV
RQJA Junction-to-Ambient© - 62
RNA Junction-to-Ambient® - 40
iode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 64 integral reverse G
(Body Diode) ©© p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.8A, VGs = 0V Ci)
trr Reverse Recovery Time - 160 240 ns TJ = 25°C, IF = 9.8A
Qrr Reverse RecoveryCharge - 900 1350 nC di/dt = 100Alys ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
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