IRFB16N60L ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures and Benefits• • ..
IRFB17N20D ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.17Ω 16ABenefitsl Low Gate- ..
IRFB17N50L ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications Switch Mode Power Supply (SMPS)V R typ. I Uninterruptible Power SupplyDSS DS(on) D ..
IRFB17N60K ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 94578IRFB17N60KSMPS MOSFETHEXFET Power MOSFET
IRFB18N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications Switch Mode Power Supply (SMPS) V R typ. IDSS DS(on) D Uninterruptible Power Supply5 ..
IRFB20N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications Switch Mode Power Supply (SMPS) V R typ. IDSS DS(on) D Uninterruptible Power Supply5 ..
ISL62882HRTZ , Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs and GPUs
ISL6291-1CR ,Li-ion/Li Polymer Linear Battery ChargerISL6291®Data Sheet November 2003 FN9102.1Li-ion/Li Polymer Linear Battery Charger
ISL6291-1CRZ , Li-ion/Li Polymer Linear Battery Charger
ISL62912CR ,Li-ion/Li Polymer Linear Battery ChargerFeaturesThe ISL6291 provides a low-cost integrated charger solution • Integrated Linear Pass Elemen ..
ISL6291-2CR ,Li-ion/Li Polymer Linear Battery ChargerISL6291®Data Sheet November 2003 FN9102.1Li-ion/Li Polymer Linear Battery Charger
ISL6291-2CR-T ,Li-ion/Li Polymer Linear Battery ChargerFeaturesThe ISL6291 provides a low-cost integrated charger solution • Integrated Linear Pass Elemen ..
IRFB16N60L
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
FOR REVIEW ONLY
International
TOR Rectifier
SMPS MOSFET
PD - TBD
IRFB16N60L
Applications HEXFET@ Power MOSFET
. Zero Voltage Switching SMPS
. V R t . Trr typ. I
. Telecom and Server Power Supplies DSS DS(on) yp D
. Uninterruptible Power Supplies 600V 385mQ 130ns 16A
q Motor Control applications
Features and Benefits
. SuperFast body diode eliminates the need for external b, 'jiii5
diodes in ZVS applications. "tSr "c,,
q Lower Gate charge results in simpler drive requirements. N. . '
q Enhanced dv/dt capabilities offer improved ruggedness.
. Higher Gate voltage threshold offers improved noise immunity. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 16
ID @ To = 100°C Continuous Drain Current, I/ss @ 10V 10 A
lm, Pulsed Drain Current co 60
PD @Tc = 25°C Power Dissipation 310 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage t30 V
dv/dt Peak Diode Recovery dv/dt © 10 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) tom (Ibf-in)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 v T J = 25°C, IS = 16A, VGS = ov ©
trr Reverse Recovery Time - 130 200 ns TJ = 25°C, IF = 16A
- 240 360 T J= 125°C, di/dt = 100A/ps Ci)
er Reverse Recovery Charge - 450 670 nC TJ = 25°C, IS = 16A, VGS = 0V ©
- 1080 1620 Tv-- 125°C, di/dt = 100A/ps GD
IRRM Reverse Recovery Current - 5.8 8.7 A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
02/03/03
IRFB16N60L International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 385 460 mf2 Veg = 10V, b = 9.0A 6)
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 pA VDS = 600V, Vss = 0V
- - 2.0 mA Vos = 480V, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Ves = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Re Internal Gate Resistance - 0.79 - Q f = 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 8.3 - - S Vos = 50V, ID = 9.0A
q, Total Gate Charge - - 100 ID = 16A
095 Gate-to-Source Charge - - 30 nC VDS = 480V
di Gate-to-Drain ("Miller") Charge - - 46 Vss = 10V, See Fig. 7 & 15 C)
tum) Turn-On Delay Time - 20 - Vor, = 300V
t, Rise Time -- 44 - ns b = 16A
tam) Turn-Off Delay Time - 28 - Rs = 1.89
t: Fall Time - 5.5 - VGS =10V,See Fig. 11a &11b ©
Ciss Input Capacitance - 2720 - Ves = ov
Coss Output Capacitance - 260 - l/rss = 25V
Crss Reverse Transfer Capacitance - 20 - pF f = 1.0MHz, See Fig. 5
Coss eff. Effective Output Capacitance - 120 - Vss = OV,VDS = 0V to 480V ©
Coss eff. (ER) Effective Output Capacitance - 100 -
(Energy Related)
Avalanche Characteristics
S bol Parameter
EAS ng u se V e nergy
IAR v urrent
EAR nergy
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.4 °C/W
ReJA Junction-to-Ambient - 62
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle 3 2%.
max. junction temperature. (See Fig. 11) (9 Coss eff. is a fixed capacitance that gives the same charging time
(D Starting TJ = 25°C, L = 2.5mH, Rs = 259, as Coss while Vos is rising from 0 to 80% Voss.
lAs = 16A, dv/dt = 10V/ns. (See Figure 12a) Coss eff.(ER) is a fixed capacitance that stores the same energy
© Iso S16A, di/dt S 340A/ps, Voo f V(BR)DSSw as Coss while Vos is rising from O to 80% VDSS-
To f 150°C.
2
