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IRFAC30
600V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
International
IEZR Rectifier
REPE I I I I V E AVALANCHE AND dV/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part N umber BVDSS RDS(on) m
IRFAC30 600V 229 3.6A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
PD -905 13
IRFAC30
600V, N-CHANNEL
K‘W‘l‘
verse energy and diode recovery dv/dt capability. TO'3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. ll Repetitive Avalanche Ratings
They are well suited for applications such as switching © Dynamlc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio I: Hermetically Sealed
amplifiers and high energy pulse circuits. ll Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS =0V, TC = 25°C Continuous Drain Current 3.6
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 2.3 A
IDM Pulsed Drain Current C) 14
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 180 mJ
IAR Avalanche Current Cf) 3.6 A
EAR Repetitive Avalanche Energy co 7.5 mJ
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRFAC30 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.70 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 2.2 VGS = 10V, ID = 2BAC0
Resistance - - 2.5 VGS = 10V, ID =3.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 2.4 - - S (V) VDS > 15V, IDS = 2.3A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 480V,VGs=0V
- - 250 HA VDS =480V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 16 - 38 VGS = 10V, ID = 3.6A
Qgs Gate-to-Source Charge 2.0 - 4.6 nC VDS = 300V
Qgd Gate-to-Drain ('Miller') Charge 7.5 - l7
td(on) Turn-On Delay Time - - 17 VDD =300V, ID =3.6A,
tr Rise Time - - 20 RG =7.5f2
tti(om Turn-Off Delay Time - - 53 ns
tf Fall Time - - 21
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/0.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 630 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 80 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 15 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 3.6 A
ISM Pulse Source Current (Body Diode) C) - - 14
VSD Diode Forward Voltage - - 1.6 V Tj = 25°C, Is =3.6A, VGS = 0V co
trr Reverse Recovery Time - - 810 nS Tj = 25°C, IF = 3.6A, di/dt S l00A/pus
QRR Reverse Recovery Charge - - 4.2 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.67 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
