IRF9Z34NLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Y, 1rga'u'te Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Continuous Drai ..
IRF9Z34NLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-262 packageInternational
TOR RectifierMimnced Process Technology
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IRF9Z34NLPBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
:raRliUctifier
Advanced Process Technology
Surface Mount (IRF9Z34NS)
Low-profile through-hole (IRF9Z34NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
q Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low ora-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesign thatHEXFET PowerMOSFETs
are well Known for, provides the designerwith an extremely
efficient and reliable device tor use in a wide variety of
applications.
PD- 95769
IRF9Z34NSPbF
IRF9Z34NLPbF
VDSS = -55V
RDS(on) = 0.109
ko-- -19A
The DZPakisa surface mount power package capable of 02pak TO-262
accommodating die sizes up to FiiEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable tor high current applications because of
its low internal connection resistance and can dissipate
up to 20W in a typical surface mount application.
The through-hole version (I RF92534NL) is available torlow-
profile aPPlicatio ns.
Absolute Maximum Ratings
Parameter Max. Units
ID Cl TC = 25''C Continuous Drain Current, I/ss Q -10VCs) -19
ID Q TC = 100°C Continuous Drain Current, Vss (2 -10VS -14 A
bs, Pulsed Drain Current COG) -68
PD@TA=25°C Power Dissipation 3.8 W
PD @Tc = 25''C Power Dissipation 68 W
Linear Derating Factor 0.45 wrc
Vss Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy©© 180 ml
IAR Avalanche Current® -10 A
EAR Repetitive Avalanche Energy0) 6.8 mJ
dv/dt Peak Diode Recovery dv/dt ss -5.0 V/ns
Tu Operating Junction and -55 to + 175
Tsre Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rex Junction-to-Case - 2.2 ''C/W
RM JunctiartoAnbient( PCB Mounted,steadpstate)" - 40
1
04/25/05
IRF9Z34NS/LPbF International
TOR Rectifier
Electrical Characteristics (ii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V Vos = OV, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coertcient - -0.05 - W'C Reference to 25''C, ID = MmAS
Roam) Static Drain-to-Source On-Resistance - - 0.10 n Vss = -10V, ID = -10A 6)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = Ws, ID = -250PA
gts Forward Transconductance 4.2 - - S Ws = -25V, ID = MOAS
loss Drain-toSource Leakage Current - - -25 pA VDS = -55V, Vos = 0V
- - -250 Vos = -44V, Vos = OV, Tu = 150°C
loss Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
Qg Total Gate Charge - - 35 ID = -10A
q, Gate-to-Source Charge - - 7.9 nC Vros = -44V
di Gate-to-Drain ("Miller") Charge - - 16 Vas = -10V, See Fig. 6 and 13 SCs
tam) Turn-On Delay Time - 13 - Va, = -28V
tr RiseTIme - 55 - ns ID = -10A
tum) Turn-Off Delay Time - 30 - Rs =13Q
t, Fall Time - 41 - Ro = 2.69, See Fig. 10 ©
LS Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Css Input Capacitance - 620 - Veg = 0V
Coss Output Capacitance - 280 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -1 9 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 0
(Body Diode) co - - -68 p-n junction diode. 5
VSD Diode Forward Voltage - - -1.6 V Tu = 25''C, ls = -10A, Veg = 0V ©
trr Reverse Recovery Time - 54 82 ns Tu = 25''C, F: = -10A
Ch, Reverse Recovery Charge - 110 160 nC di/dt = -100/Vps 3)S
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+ LD)
Notes:
C) Repetitive rating: pulse width limited by co Pulse width s: 300ps; duty cycles: 2%.
max. junction temperature. ( See M. 11 )
© Starting Tu-- 25''C, L = 3.6mH 6) Uses IRF9234N data and test conditions
Rs = 25:1 [AS = -10A. (See Figure 12)
a) la, s; -10A, di/dt s -290/Vps, V00 s; V(Bppss.
Tu s: 175°C
"When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering tech niqu es refer to application note #AN-994.
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