IRF9Z34NPBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRF9Z34NS ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1525IRF9Z34NS/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9Z34NS) ..
IRF9Z34NS ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF9Z34PBF ,-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9Z34STRL ,-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFAC30 ,600V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
ISL6271ACRZ , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
ISL6273 ,1.2A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck RegulatorApplicationsOrdering Information• Single Li-Ion Battery-Powered EquipmentPART TEMP. • DSP Core Powe ..
ISL6273IRZ-T , 1.2A Low Quiescent Current 1.5MHz High Efficiency Synchronous Buck Regulator
ISL62870HRUZ-T , PWM DC/DC Voltage Regulator Controller
IRF9Z34N-IRF9Z34N.-IRF9Z34NPBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
PD - 9.14858
IRF9Z34N
HEXFET® Power MOSFET
VDSS = -55V
RDS(on) = 0.109
ID = -19A
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, I/ss @ -10V -19
ID @ Tc = 100°C Continuous Drain Current, Ves @ -10V -14 A
IDM Pulsed Drain Current co -68
PD @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 180 m]
IAR Avalanche CurrentCD -10 A
EAR Repetitive Avalanche Energy© 6.8 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 2.2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 62
8/25/97
IRF9Z34N
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - -0.05 - V/°C Reference to 25°C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.10 f2 VGs = -10V, ID = -10A 60
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 4.2 - - S VDs = 25V, ID = -10A
loss Drain-to-Source Leakage Current - - -25 pA l/os = -55V, VGS = 0V
- - -250 Vos = -44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 35 ID = -10A
Qgs Gate-to-Source Charge - - 7.9 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 16 VGS = -10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 13 - VDD = -28V
tr Rise Time - 55 - ns ID = -IOA
tum) Turn-Off Delay Time - 30 - R3 = 139
tf Fall Time - 41 - RD = 2.6n, See Fig. 10 ©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25m.) Gil/tj-) )
Ls Internal Source Inductance - 7 5 - from package
. and center of die contact s
Ciss Input Capacitance - 620 - Veg = 0V
Coss Output Capacitance - 280 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -19 MOSFET symbol D
(Body Diode) A showing the 'r-,,-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) C) - - -68 p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V To = 25°C, Is = -10A, VGs = 0V ©
trr Reverse Recovery Time - 54 82 ns T J = 25°C, IF = -10A
Qrr Reverse RecoveryCharge - 110 160 nC di/dt = -100Alps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Starting Tu-- 25°C, L = 3.6mH
Rs = 259, IAS = -10A. (See Figure 12)
© ISD f -10A, di/dt s -290A/ps, l/DD s V(BR)DSS,
TJs 175°C
© Pulse width f 300ps; duty cycle f 2%.
