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IRF9Z34-IRF9Z34PBF
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
EOR Rectifier
PD-9.648A
|RF9234
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
tt Repetitive Avalanche Rated
o P-Channel
0 175°C Operating Temperature
o FastSwitching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Voss = -601/
RDS(OH) = 0.14Q
s ID cr. -18A
on-resistance and cost-effectiveness.
The TO-22O package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and tow package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
BI :33
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves a -10 V -18
ID @ Tc = 100°C Cohtinuous Drain Current, VGs © -10 V -13 A
IDM Pulsed Drain Current C) -72
Po @ To Lt" 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 370 ml
IAR Avalanche Current Ci) -18 A
EAR Repetitive Avalanche Energy co 8.8 mJ
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
TJ Operating Junction and -55 to +175
Tsre Storage Temperature Range _ cc,
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m) J
Thermal Resistance
Parameter Min. Typ. Max. Units
Ray: Junction-to-Case -- - 1 Jr
Recs l Case-to-Sink, Flat, Greased Surface - 0.50 - "C/W
Rm Junction-to-Ambient - - l 62
IRF9Z34
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
T Parameter Min. Typ. Max. Units Test Conditions
V(Bmoss Drain-to-Source Breakdown Voltage -60 - - V Ves=0V, Irs=-25thtA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient ....-. -0.060 - VPC Reference to 25°C, kr=-1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.14 n VGs=-10V, ID=-11A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vns=Vss, b=-250pA
gls FonNard Transconductance 5.9 -. - s VDs=-25V, ID=-11A G)
loss Drain-to-Source Leakage Current -. - -100 WA trhs---5t7V, I/ss-HN
-- - -500 VDs=-48V, l/ss-MN, TJ=150°C
lass Gate-to-Source Forward Leakage _ - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGS=20V
th Total Gate Charge - -- 34 ID=-18A
Clgs Gate-to-Source Charge - - 9.9 no VDs=-48V
di Gate-to-Drain ("Miller") Charge - - 16 Vss----10i/ See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 18 - Vno=-3OV
tr Rise Time - 120 - ns b--..)
tam) Turn-Off Delay Time - 20 ....-. Re=12§z
t1 Fall Time - 58 - Ro=1.5§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 -- tit,rati'n1 _ |_D
nH from package aiitiiev,',
Ls Internal Source Inductance .--. 7.5 - and center 6f
die contact 3
Ciss Input Capacitance - 1100 - Ves=0V
Coss Output Capacitance - 620 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 100 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -. - -72 integral reverse G
(Body Diode) (D p-n junction diode. 8
Vso Diode Forward Voltage - - -6.3 V TJ=25°C, Is=-18A, VGS=OV ©
tn Reverse Recovery Time - 100 200 ns TJ=25°C, |F=-18A
Clrr Reverse Recovery Charge - 0.28 0.52 wc di/dt---100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=1.3mH
RG=25£2, lAs=-18A (See Figure 12)
TJS175°C
© lsDsf.-18A,.di/dtsi.170/Vps, VDDSV(BR)Dss.
© Pulse width 3 300 us; duty cycle 32%.
