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IRF9Z24S
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
International
Ieaa Rectifier
PD - 9.912A
92248/ L
HEXFET® Power MOSFET
Advanced Process Technology
Surface Mount (IRF9Z24S)
Low-profile through-hole (IRF9Z24L)
175°C Operating Temperature
Fast Switching G
P- Channel
o Fully Avalanche Rated
Description
VDSS = -60V
RDS(on) = 0.289
In =-11A
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z24L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ Tc = 25°C
Continuous Drain Current, VGS @ 10V©
b @ TC = 100°C
Continuous Drain Current, VGS @ 10VS
Pulsed Drain Current C)6)
PD @TA = 25°C
Power Dissipation
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
0.40 W/°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©©
240 mJ
Avalanche Current0D
Repetitive Avalanche EnergyCD
6.0 mJ
Peak Diode Recovery dv/dt ©S
-4.5 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Res
istance
Parameter
Typ. Max. Units
Junction-to-Case
Junction-to-Ambient ( PCB Mounted/steady-state)"
- 40 C/W
8/25/97
I RF9Z24S/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -60 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.056 - V/°C Reference to 25°C, ID =-1mAS
RDS(on) Static Drain-to-Source On-Resistance - - 0.28 n VGs =-10V, ID = -6.6A co
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGs, ID = -250pA
gfs Forward Transconductance 1.4 - - S VDs = -25V, ID = -6.6AS
loss Drain-to-Source Leakage Current - - -100 pA VDS = -60V, VGS = 0V
- - -500 VDS = -48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
th Total Gate Charge - - 19 ID = -11A
Qgs Gate-to-Source Charge - - 5.4 nC VDS = -48V
di Gate-to-Drain ("Miller") Charge - - 11 VGs = -10V, See Fig. 6 and 13 (ii)6)
tum”) Turn-On Delay Time - 13 - VDD = -30V
tr Rise Time - 68 - ns ID = -11A
tam) Turn-Off Delay Time - 15 - Rs = 189
tr Fall Time - 29 - RD = 2.59, See Fig. 10 CO
Ls lntemal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 570 - VGS = 0V
Coss Output Capacitance - 360 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0MHz, See Fig. 5(0
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -ll A showing the H4
ISM Pulsed Source Current integral reverse G (rl
(Body Diode) OD - - -44 p-n junction diode. s
VSD Diode Forward Voltage - - -6.3 V Tu = 25°C, Is = -11A, VGS = 0V GD
trr Reverse Recovery Time - 100 200 ns Tu = 25°C, IF = -11A
er Reverse Recovery Charge - 320 640 nC di/dt = 100A/ps CO(S)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle s: 2%.
max. junction temperature. ( See fig. 11 )
© VDD = -25V, starting Tu = 25°C, L = 2.3mH s Uses IRF9Z24 data and test conditions
Re: 250, IAS = -11A. (See Figure 12)
© ISD f -11A, di/dt S 140A/ps, VDD f V(BR)DSS,
Tuf 175°C
** When mounted on l" square PCB (FR-4 or G-IO Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
