IRF9Z24NSTRLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR RectifierKavanced Process Technology
Surface Mount (IRF9Z24NS)
Low-profile thr ..
IRF9Z24S ,-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF9Z34 ,-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
IOR
Rectifier
PD-9.648A
IRFQZ34
HEXFETOD Power MOSFET
q Dynamic dv/ ..
IRF9Z34L ,Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF9Z34N ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1485BIRF9Z34N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = -55 ..
IRF9Z34N. ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
ISL6269 ,High-Performance Notebook PWM Controller with Bias Regulator and Audio-Frequency Clampfeatures of fixed-• Output voltage range: +0.6V to +3.3Vfrequency PWM and hysteretic PWM while elim ..
ISL6269BCRZ , High-Performance Notebook PWM Controller with Audio-Frequency Clamp
ISL6271ACRZ , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
ISL6273 ,1.2A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck RegulatorApplicationsOrdering Information• Single Li-Ion Battery-Powered EquipmentPART TEMP. • DSP Core Powe ..
IRF9Z24NSTRLPBF
-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRF9Z24NS)
Low-profile through-hole (IRF9Z24NL)
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETS from International Rectifier
utilize advanced processing techniques to achieve
extremely low ora-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETS
are well known for, provides the ciesigrnerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The DZPak is a surface mount power package capable of
accommodating die sizes up to FUE8-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resista nce and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (|RF9224NL) is available tor
low-profile applications,
Absolute Maximum Ratings
PD- 95770
IRF9Z24NSPbF
IRF9Z24NLPBF
D VDSS = -55v
RDS(on) = 0.1759
ID = -12A
Param eter Max. Units
b (t TC T 25T Continuous Drain Current, V65 (P -10V© -12
b C) To = 100°C Continuous Drain Current, Veg (t -1(h/S -8.5 A
IDM Pulsed Drain Current M) -48
PD (PTA T 25°C Power Dissipation 3 8 W
PD (tfc = 25°C Power Dissipation Mi W
Linear Derating Factor 0.30 Wt'0
l/ss Gate-lo-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy0)Cs) 96 ml
bs Avalanche Current® -7.2 A
EAR Repetitive Avalanche EnergyG) 4.5 ml
dv/dt Peak Diode Recovery dv/dt SS -5.0 V/ns
T: Operating Junction and -55 to + 175
Tm Storage Temperature Range T
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-toCase - 3.3 D
RM Junctim-toAmbienH PCB Mamted,steadrdate)" - 40 CM,
1
04/25/05
IRF9Z24NS/LPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VisRVss Drain-to-Source Breakdown Voltage -55 - - V Vos = OV, lo = -250pA
AVQRJDSSIATJ Breakdown Voltage Temp. CoefMient - -0.05 - V/°C Reference to 25°C, ID = -1rnAS
Rosmn) Static Drain-ttiris On-Resistance - - 0.175 Q Vos =-10V, b = -7.2A G)
Vegm) Gate Threshold Voltage -2.0 - -4.0 V Vos = Vss, ID = -250PA
ge, Forward Transconductance 2.5 - - S Ws = -25V, ID = -7.2A
loss Dmin-ttySamte Leakage Current - - -25 PA Ws = -55V, Ws = 0V
- - -250 Vos = -44V, Vos = OV, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Ws = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 19 ID = -7.2A
Qgs Gate-to-Source Charge - - 5.1 nC Ws = -44V
di Gate-to-Drain ("Miller") Charge - - 10 I/ss = -10V. See Fig. 6 and 13 3)Cs)
triion) Turn-On Delay Time - 13 - Wo = -28V
tr Rise Time - 55 - ns ID = -7.2A
tam) Turn-Off Delay Time - 23 - Rs = 249
it Fall Time - 37 - RD = 3.79, See Fig. 10 3)3)
Ls Internal Source Inductance 7.5 nH Between lead, .
and center of die contact
0.55 Input Capacitance - 350 - Vos = 0V
cu, Output Capacitance - 170 - pF Ws = -25V
Crss Reverse Transfer Capacitance - 92 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -12 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) . - - -48 p-n junction diode. s
V50 Diode Forward Voltage - - -1.6 V Tu = 25''C, ls = -7.2A, Veg = 0V co
t, Reverse Recovery Time - 47 71 ns Tu = 25''C, IF = -7.2A
er Reverse RecoveryCharge - 84 130 nC di/dt = -100A/ps 3)Cs)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-an is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max.junction temperature. ( See fig, 11 )
C) Starting T: = 25''C, L = 3.7mH
Rs = 259, IAS = -7.2A. (See Figure 12)
CQ) '80 5-7.2A. di/dt C -280A/ps, VDD I 1/eRvss,
Tu; 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
© Pulse width I 300ps,' duty cycle I 2%.
G) Uses IRF9Z24N data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
