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IRF9Z24N-IRF9Z24NPBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
D VDSS = -55V
lit RDS(0n) = 0.1759
ID = -12A
resistance and low package cost of the TO-220 TO/WW
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -12
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -8.5 A
IDM Pulsed Drain Current co -48
PD @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 96 mJ
IAR Avalanche CurrentC) -7.2 A
EAR Repetitive Avalanche Energy© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 3.3
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 62
8/27/97
IRF9Z24N
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - -0.05 - V/°C Reference to 25°C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.175 f2 VGs = -10V, ID = -7.2A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 2.5 - - S VDs = -25V, ID = -7.2A
loss Drain-to-Source Leakage Current - - -25 pA l/os = -55V, VGS = 0V
- - -250 Vos = -44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 19 ID = -7.2A
Qgs Gate-to-Source Charge - - 5.1 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 10 VGS = -10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 13 - VDD = -28V
tr Rise Time - 55 - ns ID = -7.2A
tum) Turn-Off Delay Time - 23 - R3 = 249
tf Fall Time - 37 - RD = 3.79, See Fig. 10 ©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Gil/tj-) )
Ls Internal Source Inductance - 7 5 - from package
. and center of die contact s
Ciss Input Capacitance - 350 - VGs = 0V
Coss Output Capacitance - 170 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 92 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -12 MOSFET symbol D
(Body Diode) A showing the 'r-,,-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) C) - - -48 p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V To = 25°C, Is = -7.2A, VGs = 0V GD
trr Reverse Recovery Time - 47 71 ns T J = 25°C, IF = -7.2A
Qrr Reverse RecoveryCharge - 84 130 PC di/dt = -100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Starting To-- 25°C, L = 3.7mH
Rs = 259, IAS = -7.2A. (See Figure 12)
TJs 175°C
© ISD s -7.2A, di/dt s -28OA/ps, vDD s V(BRpSS,
© Pulse width f 300ps; duty cycle f 2%.
