IRF9Z20 ,(IRF9Z22) HEXFET TransistorsFeatures:
I P-Channel Versatility
l Compact Plastic Package
I FastSwitching
I Low Drive C ..
IRF9Z20 ,(IRF9Z22) HEXFET TransistorsllE D I 0055053 0000030 3 I
INTERNATIONAL RECTIFIER
INTE RNATIONAL RECTI FIER
P1EE)(I=EE1F®' ..
IRF9Z24 ,-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9Z24N ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD -9.1484BIRF9Z24N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating V = -55 ..
IRF9Z24NPBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRF9Z24NSTRLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR RectifierKavanced Process Technology
Surface Mount (IRF9Z24NS)
Low-profile thr ..
ISL6267HRZ , Multiphase PWM Regulator for AMD Fusion Mobile CPUs
ISL6269 ,High-Performance Notebook PWM Controller with Bias Regulator and Audio-Frequency Clampfeatures of fixed-• Output voltage range: +0.6V to +3.3Vfrequency PWM and hysteretic PWM while elim ..
ISL6269BCRZ , High-Performance Notebook PWM Controller with Audio-Frequency Clamp
ISL6271ACRZ , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
ISL6271ACRZ-T , Integrated XScale Regulator
IRF9Z20
(IRF9Z22) HEXFET Transistors
IIE D lil uassusa 0000030 a [l
INTERNATIONAL RECTIFIER
INTE RNATIONAL RECTI FIE R
Data Sheet No. PD-9.461A
T-39-19
P1EE)(F=EET“B1FF§IdeESIE§1FCJFQES
P-CHANNEL
so VOLT
POWER MDSFETS
IlllRllFE)geEilltfQ
lllRllFSKiielliiillEl
-50 Volt, 0.28 Ohm, HEXFET
T0-220AB Plastic Package
The HEXFEP technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design
achieve very low on-state resistance combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for application which
require the convenlence of reverse polarity operation. They
retaln all of the features of the more common N-Channel
HEXFETs such as voltage control, very fast switching, ease
of paralleling. and excellent temperature stability.
P-Channel HEXFETs are Intended for use in power stages
where complementary symmetry with N-Channel devices offers
circult simplification. They are also very useful in drive stages
because of the circuit versatility offered by the reverse polarity
Connection. Applications include motor control. audio
amplifiers, switched mode converters, control clrcults and
pulse amplifiers.
CASE STYLE AND DIMENSIONS
10.54 (0.415)
15.09 (0.594)
13.97 (0.550)
Product Summary
Part Number
VDS RDS(on) ID
IRFQZZO
-50V 0.280
IRF9Z22
-50V 0.330
Features:
II P-ChannelVersatitity
'' Compact Plastic Package
ll Fast Switching
II Low Drive Current
I Ease of Paralleling
II Excellent Temperatu re Stability
Io SHOOISD
237mm: A- iiisiiLijii'
252 to ID}! 3 rg til mg]
L 354mm) 0m
l " m GN
u, l tt m 0an
r-l-ji-)
TERM] SOURCE
ISM til 584t
ll M (0 5841
KISIOASIMIN
->, tl--
nsnossm
u " w 510) ' _ ,
It0i0055t
l 15"] Mil
1% m_ws'
TERM BRAIN
TEHMI GATE
JSIIDIEOI
43Ht11rltl
2 " ill n0) -
l 29m 0qu
53310210)
4 8310 19m
SECTION x x
'---wl
I 093N001"
2"tiltl41 0 a 1001)
tiHi0i00
usnunzm
annuals» -
Case Style TD-ZZOAB
Dimensions in Millimeter: and (Inches)
IRF9Z20, IRF9222 Devices “E D [I “555“53 Cli30l%3h 5 [I
INTERNATIONAL RECTIFIER T-39-19
Absolute Maximum Ratings
Parameter IRFSZZO IRFBZZZ Units
vos Drain . Source Voltage til -60 -60 V
VDGR Drain - Gate Voltage (R63 = 20 Kol ti) -50 -50 V
ID @ Tc = 25°C Continuous Drain Current -9.7 -8.9 A
ID @ Tc " 100°C Continuous Drain Current -6.t -5.6 A
IDM Pulsed Drain Current © -39 -36 A
vos Gate . Source Voltage +20 V
Po © Tc '" 25°C Max. Rower Dissipation 40 W
Uneal Deming Factor 0.32 WIK5
ILM Inductive Current, Clamped -30 (See Fig. 14), l. = 1001M -38 A
IL Unclamped Inductive Current (See Fig. 15) A
(Avalanche Current) © -2,2
T 0 eratin Junction and
Tim sarage 1i',Crl'tS,' Range -tili to 150 cc
lead Temperature 300 (0.063 In. (1.6mm) from case for 105) ''C
Electrical Characteristics o Tc = 25°C (Unless Otherwise Specified)
Parameter Type Min. Typ. Max. Units Test Conditions
BVDSS Drain . Source Breakdown Voltage Iargzzo -50 - - v V63 .3 av
IRFBZZZ ID = -250PA
V6511” 6819 Threshold Voltage ALL -2.0 - -4.0 V VDS = Was, 10 = -260 PA
IGSS Gate-Source leakage Forward ALL - - -600 nA V55 = -20V
kyss Gate~Sourca Leakage Reverse ALL - -- 500 nA VGS = 20V
IDSS Zero Gate Voltage Drain Current ALL - - -250 “A VDS = Max. Rating, V55 = 0V
- - -N00 PA vos = Max. Rating x 0.8, sz = ov, Tc = 125°C
I On-State Drain Current © IRF9220 -9.7 - - A
D(on) IRF9Z22 -8.9 _ - A vDS > 'Dlon) x RDSkzmmaxu VGS = -10V
Roswn) Stirtlg Drain-Source On-Stata Resistance © IRF9Z20 - 0.20 0.28 n = - _ -
|RF9222 - 0.28 0.33 n vos 10v, tty - 5.6A
915 Fdrward Tmnsconductance © ALL 2.3 3.5 - St01 VDs = 2 x V55, IDS = -5.6A
Ciss Input Capacitance ALL - 480 pF V53 = 0V, vos = -25V, f = 1.0 MHz
Coss Output Capacitance ALL - 320 pF See Hg. 10
CE; Reverse Transfer Capacltamus ALL - 58 pF
Won, Turn-On Delay Time ALL - 8.2 12 " VDD w -25V, ID a -S.7A, R6 = 180, RD = 2.4tt
tr Rlse Time ALL - 57 86 ns Sea Fig. 16
tstoto Turn-oft Delay Time ALL - 12 18 M (MOSFET switching Iimss are essentially independent of
tt Fall Time ALL - 25 38 M operating temperaturisl
Total Gate Charge VGS = -10V, ID -- -9,7A, Vros = 0.8 Max. Rating.
tlg (ttate-Source Plus Gate-Dlaln) AU. - 17 26 " Set, Fig. 17 fur test circuit. (Gate charge is essentially
ogs GattFNurot Charge ALL - 4.1 8.2 nC independent of operating temperatura)
Ard t3ttteihain ("Millet") Charge ALL - 5.7 8.6 nC
LD Internal Drain lndumance ALL - 4.5 - nH Measured from the Modified MOSFET symbol
draln lead, 6mm (0.25 In.) showing the
(tom package to center of internal Inductance: a
die devlca "
cs Internal Source Inductance ALL - 7.6 - nH Measured from the source
lead, 6mm (0.25 in.) itum L
package to source bonding
pad. '
Thermal Resistance
11ch JuntrtiotvttrCastt ALL - - 3.1 K/WG)
Rthcs Case-to-Sink ALL - 1.0 - mrs Mounting surface fiat, smooth, and greased.
RmJA JunctiorrttFArnblent ALL - - 80 K/W© Typical socket mount
