IRF9956TR ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF9956TR ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF9Z14 ,-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9Z14S ,-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF9Z20 ,(IRF9Z22) HEXFET TransistorsFeatures:
I P-Channel Versatility
l Compact Plastic Package
I FastSwitching
I Low Drive C ..
IRF9Z20 ,(IRF9Z22) HEXFET TransistorsllE D I 0055053 0000030 3 I
INTERNATIONAL RECTIFIER
INTE RNATIONAL RECTI FIER
P1EE)(I=EE1F®' ..
ISL6265CHRTZ , Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable Mobile CPUs
ISL6265HRTZ-T , Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable
ISL6267HRZ , Multiphase PWM Regulator for AMD Fusion Mobile CPUs
ISL6269 ,High-Performance Notebook PWM Controller with Bias Regulator and Audio-Frequency Clampfeatures of fixed-• Output voltage range: +0.6V to +3.3Vfrequency PWM and hysteretic PWM while elim ..
ISL6269BCRZ , High-Performance Notebook PWM Controller with Audio-Frequency Clamp
ISL6271ACRZ , Integrated XScale Regulator
IRF9956TR
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 91559B
International
Tart, Rectifier IRF9956
HEXFET© Power MOSFET
Surface Mount
Very Low Gate Charge and l
Switching Losses G2 _ 5113 D2 RDS(on) = 0.109
q Fully Avalanche Rated
0 Generation V Technology
o Ultra Low On-Resistance SI _lL1- 84091
0 Dual N-Channel MOSFET (313:2 l F 7mm VDSS = 30V
S2 mf- 63]: D2
Top View
Description
Fifth Generation HEXFETefrom International Rectifier Recommended upgrade: IRF7303 or IRF7313
utilize advanced processmg techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Lower profile/smaller equivalent: IRF7503
The 80-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, orwave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos 30 V
Gate-Source Voltage VGS i 20
Continuous Drain Currents TA = 25 C b 3.5
TA = 70''C 2.8 A
Pulsed Drain Current IBM 16
Continuous Source Current (Diode Conduction) ls 1.7
. . . . TA = 25°C 2.0
Maximum Power Dissipation © TA = 70°C PD 1.3 W
Single Pulse Avalanche Energy © EAS 44 m]
Avalanche Current IAR 2.0 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 V/ ns
Junction and Storage Temperature Range Tu, TSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient© ReJA 62.5 'CIW
04/29/03
IRF9956 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Veg = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.06 0.10 Q VGS = 10V, ID = 2.2A ©
- 0.09 0.20 Ves = 4.5V, ID = 1.0A (9
VGSM Gate Threshold Voltage 1.0 - - V VDs = Vcs, ID = 250pA
gfs Forward Transconductance - 12 - S Vos = 15V, ID = 3.5A
IDSS Drain-to-Source Leakage Current - - 2.0 pA Vns i 24V, VGS i 0V _ o
- - 25 Vos - 24V, Vss - 0V, TJ - 125 C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 24V
Gate-to-Source Reverse Leakage - - -100 Ves = -24V
Qg Total Gate Charge - 6.9 14 ID = 1.8A
Qgs Gate-to-Source Charge - 1.0 2.0 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 1.8 3.5 Vcs = 10V, See Fig. 10 G)
tam) Turn-On Delay Time - 6.2 12 VDD = 10V
tr Rise Time - 8.8 18 ns ID =1.0A
tam) Turn-Off Delay Time - 13 26 Rs = 6.09
tt Fall Time - 3.0 6.0 RD =10Q ©
Ciss Input Capacitance - 190 - Ves = 0V
Cass Output Capacitance - 120 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.7 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - 16 p-n junction diode. s
l/sn Diode Forward Voltage - 0.82 1.2 V Tu = 25°C, ls = 1.25A, Vcs = 0V ©
trr Reverse Recovery Time - 27 53 ns Tu = 25°C, IF = 1.25A
Qrr Reverse RecoveryCharge - 28 57 nC di/dt = 100A/ps ©
Notes:
C) Repet1tive rating; pulse width limited by (3 '50 g 2.0A, di/dt g 1OOA/ps, l/DDS V(BR)DSS:
max. junction temperature. ( See fig. 11 ) Tu I 150°C
© Starting TJ = 25°C, L = 22mH © Pulse width S 300ps; duty cycle 3 2%.
Rs = 25Q, IAS = 2.0A.
(9 Surface mounted on FR-4 board, ts 10sec.
