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IRF9953TRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95477
International
Tart, Rectifier RF9953PbF
q Generation V Technology HEXFET Power MOSFET
o Ultra Low On-Resistance 1 a
. Dual P-Channel MOSFET SI [ICE'- l 5330‘ V = -30V
q Surface Mount an m2 LCIE DI DSS
0 Very Low Gate Charge and S2 LLL''- MU D2
Switching Losses 4 l 5 -
. Fully Avalanche Rated G2 E: cm D2 RDS(on) - 0.259
q Lead-Free Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With theseimprovements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos -30 V
Gate-Source Voltage VGS i 20
Continuous Drain Currents TA = 25 C ko -2.3
TA = 70''C -1.8 A
Pulsed Drain Current IBM -10
Continuous Source Current (Diode Conduction) ls 1.6
. . . . TA = 25°C 2.0
Maximum Power Dissipation (S) TA = 70°C PD 1.3 W
Single Pulse Avalanche Energy EAS 57 m]
Avalanche Current IAR -1.3 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt@ dv/dt -5.0 V/ ns
Junction and Storage Temperature Range Tu, TSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient]) RBJA 62.5 'CM/
7/16/04
IRF9953PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vcs = 0V, In = -250pA
AV
RDs(on) Static Drain-to-Source On-Resistance - 0.165 0.250 l/ss = lov, ID = -1.0A ©
- 0.290 0.400 Ves = 4.5V, ID = -0.50A ©
Vesuh) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
giis Forward Transconductance - -2.4 - S Vos = -15V, ID = -2.3A
loss Drain-to-Source Leakage Current - - -2.0 pA VDS I 24V, Vcs I 0V _ a
- - -25 l/ns - 24V, VGs - 0V, Tu - 55 C
less Gate-to-Source Forward Leakage - - 100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - -100 VGS = 20V
Qg Total Gate Charge - 6.1 12 ID = -2.3A
Qgs Gate-to-Source Charge - 1.7 3.4 no Vos = -10V
di Gate-to-Drain ("Miller") Charge - 1.1 2.2 Vss = -1OV, See Fig. 10 ©
td(on) Turn-On Delay Time - 9.7 19 VDD = -10V
tr Rise Time - 14 28 ns ID = -1.0A
tam) Turn-Off Delay Time - 20 40 Rs = 6.09
tr FallTime - 6.9 14 RD =10Q (D
Ciss Input Capacitance - 190 - VGS = 0V
Coss Output Capacitance - 120 - pF hs = -15V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse a
(Body Diode) (D - - 16 p-n junction diode. s
l/sn Diode Forward Voltage - 0.82 1.2 V Tu = 25°C, ls = -1.25A, VGS = 0V ©
trr Reverse Recovery Time - 27 54 ns Tu = 25°C, h: = -1.25A
Qrr Reverse RecoveryCharge - 31 62 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 67mH
Rs = 25Q, IAS; = -1.3A.
s Surface mounted on FR-4 board, ts 10sec.
© ISD S M.3A, di/dt S -92/Ups, VDD S V(BR)DSSW
Tu S 150°C
© Pulse width S 300ps; duty cycle 3 2%.
