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IRF9953-IRF9953TR
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 9.1560A
International
TOR, Rectifier PRELIMINARY IRF9953
HEXFET® Power MOSFET
o GenerationVTechnology -
o Ultra Low On-Resistance Sl CI; 81: D1
o Dual P-Channel MOSFET Gll " 2 (sill " D1 VDSS = -30V
o Surface Mount 3 - (i
o Very Low Gate Charge and S2 Cf1tifllrf D2
Switching Losses G2 LIL 'i-LL D2 RDS(on) = 0.259
o FullyAvalanche Rated -
Top View
Description
Fifth Generation HEXFETs from International Rectiher Recommended upgrade: IRF7306 or IRF7316
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25''C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS * 20
. . T = 25°C -2.3
D 6) A
Continuous ran Current TA = 70°C lo -1.8 A
Pulsed Drain Current IBM -10
Continuous Source Current (Diode Conduction) ls 1.6
. . . . TA = 25°C 2.0
Maximum Power Dissipation s TA = 70°C Po 1.3 W
Single Pulse Avalanche Energy EAs 57 mJ
Avalanche Current IAR -1.3 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt© dv/dt -5.0 V/ ns
Junction and Storage Temperature Range To, TSTG -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient]) Rua 62.5 °CNV
8/25/97
IRF9953 International
TOR Rectifier
Electrical Characteristics @ T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 0.165 0.250 Q VGS = 10V, ID = M.0A ©
- 0.290 0.400 Ves = 4.5V, ID = -0.50A Cr)
VGS(th) Gate Threshold Voltage -1.0 - - V VDs = VGs, ID = -250PA
gfs Forward Transconductance - -2.4 - S Ws = -15V, ID = -2.3A
bss Drain-to-Source Leakage Current - - -2.0 pA Ws i 24V, VGS i 0V - o
- - -25 VDs - 24V, VGS - 0V, To - 55 C
less Gate-to-Source Forward Leakage - - 100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - -100 VGs = 20V
Qg Total Gate Charge - 6.1 12 ID = -2.3A
tks Gate-to-Source Charge - 1.7 3.4 nC VDs = -10V
Ogd Gate-to-Drain ("Miller") Charge - 1.1 2.2 VGS = -10V, See Fig. 10 (4)
td(on) Turn-On Delay Time - 9.7 19 VDD = -10V
tr Rise Time - 14 28 ns ID = -1.0A
tum) Turn-Off Delay Time - 20 40 RG = 6.09
tf FaIITime - 6.9 14 RD = lon (il)
Ciss Input Capacitance - 190 - VGs = 0V
Coss Output Capacitance - 120 - pF Ws = -15V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the H
ISM Pulsed Source Current A integral reverse G {131
(Body Diode) O) - - 16 p-n junction diode. s
VSD Diode Forward Voltage - 0.82 1.2 V Tu = 25°C, Is = -1.25A, VGS = 0V ©
trr Reverse Recovery Time - 27 54 ns Tu = 25°C, IF = -1.25A
Qrr Reverse RecoveryCharge - 31 62 nC di/dt = -100A/ps ©
Notes:
co Repetltive rating; pulse width limited by © [SD S -1.3A, di/dt S -92A/us, VDD g V(BR)DSS,
max. junction temperature. ( See fig. 11 ) Trs 150°C
© Starting Tu = 25°C, L = 67mH © Pulse width 3 300ps; duty cycle 3 2%.
Rs = 259, IAS = -1.3A.
6) Surface mounted on FR-4 board, t s 10sec.
