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IRF9952TRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 95135
International
Tart, Rectifier IRF9952PbF
HEXFET® Power MOSFET
o GenerationVTechnology N-CHANNELMOSFET
0 Ultra Low On-Resistance SI 'rIE1- 833301 N-Ch P-Ch
o Dual N and P Channel MOSFET G1 2 l 74H DI
0 Surface Mount S2 LIEf'- 63:: D2 Voss 30V -30V
o Very Low Gate Charge and 4 l
Switching Losses G2 F'-CHANNELMOSFE::E|:| D2
. Fully Avalanche Rated T . RDS(0n)O-1OQ 0.25Q
op View
q Lead-Free
. . Recommended upgrade: IRF7309 orlRF7319
Description Lower profile/smaller equivalent: IRF7509
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With theseimprovements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Symbol Maximum Units
N-Channel I P-Channel
Drain-Source Voltage VDS 30 V
Gate-Source Voltage Vss i 20
Continuous Drain Currents TA = 25 C In 3.5 -2.3
TA = 70°C 2.8 -1.8 A
Pulsed Drain Current IDM 16 -10
Continuous Source Current (Diode Conduction) ls 1.7 -1.3
. . . . TA = 25°C 2.0
Maximum Power Dissipation S TA = 70''C PD 1.3 W
Single Pulse Avalanche Energy EAS 44 57 m]
Avalanche Current IAR 2.0 -1.3 A
Repetitive Avalanche Energy EAR 0.25 m]
Peak Diode Recovery dv/dt © dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ,TSTG -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient s ReJA 62.5 'CIW
1
09/15/04
IRF9952PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 'lgll ii, - - V x55 i tf f: l 225505]:A
- - - - GS - , D - -
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coemcient t2 I 331: I 1//'C 2,'/',,T,C, I' 3:0: :3 : -11TnAA
N Ch - 0.08 0.10 Vcs =10V,lo = 2.2A ©
. . . - - 0.12 0.15 VGs = 4.5V ID =1.0A CI)
R Static DraIn-to-Source On-Resistance '
DS(ON) P-Ch - 0.165 0.250 Q sz = -1ov, ID = -1.0A Cl)
- 0.290 0.400 VGS = -4.5V, ID = -0.50A ©
Vegan) Gate Threshold Voltage 2:3: _11% I I V x: : tt :3 : 'lit)
gts Forward Transconductance 'tg, - 21.24 - s "dt : 2)(', Ill) i3 ©
- - . - DS - - , D - - .
N-Ch - - 2.0 Vos = 24V, VGS = 0V
loss Drain-to-Source Leakage Current 5:311 I I .350 HA tt ", éiV'y;S==oo\>l Ts = 125°C
P-Ch - - -25 Ws = -24V, bbs = 0V, T: = 125''C
less Gate-to-Source Forward Leakage N-P - - +_100 nA VCs = 120V
Qg Total Gate Charge 1f//, I g 1: N-Channel
N-Ch 1.0 2.0 k:o=1.8A,Vros=10V,Vss=10V
Qgs Gate-to-Source Charge P Ch - 1'7 3'4 nC @
NZCh I 18 3’5 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 1'1 2'2 ID = -2.3A,Vos = -10V,VGs = -10V
10mm Turn-On Delay Time 2:22 I (y, 1: N-Channel
. . N-Ch - ir', 18 vDD =10V,lo =1.0A,RG = 6.on,
tr Rise Time P-Ch - i2 28 RD = lon
tdestr) Turn-Off Delay Time :12: I g: 2213 P-Channel
vDD = -1ov, ID = -1.0A, Rs = 6.09.
. N-Ch - 3.0 6.0 -
tr Fall Time P-Ch - 6 9 14 RD - 109
_ . N-Ch - 190 - N-Channel
Ciss Input Capacitance P-Ch - 190 - VGS = 0V, Vros = 15V, f = 1.0MH2
Cass Output Capacitance 't2 I 1112i,o I pF P-Channel
Crss Reverse Transfer Capacitance 1(2 - 2 - VGS = OV, Vros = -151/, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. . N-Ch - - 1.7
Is Continuous Source Current (Body Diode) P-Ch - - -1 .3 A
. N-Ch - - 16
ISM Pulsed Source Current (Body Diode) co P-Ch - - 16
. N-Ch - 0.82 1.2 V TJ = 25''C, Is = 1.25A, kbs = 0V (9
VSD Diode Forward Voltage P-Ch - -0.82 -1.2 T: = 25''C, Is = -1.25A, VGS = OV ©
t R R Ti N-Ch - 27 53 ns N-Channel
rr everse emery Ime P-Ch - 27 54 To = 25°C, IF =1.25A, di/dt = 1OOA/ps
N-Ch - 28 57 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 31 62 " T J = 25''C, IF = -1.25A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 23 )
© N-Channel Iso S 2.0A, di/dt S 100A/ps, VDD S V(BR)DSS: To S 150°C S Surface mounted on FR-4 board, t S 10sec.
P-Channel ISD S -1.3A, di/dt S 84/Ups, VDD S V(BR)DSS, Tu S 150°C
© N-Channel Starting Tu = 25°C, L = 22mH Rs = 259, IAS-- 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 259, IAS = -1.3A.
2
