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IRF9952QTRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperatu re
Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these HEXFET
Power MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
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reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
PD - 96115B
I R F9952 Q b F
HEXFET® Power MOSFET
N-CHANNEL MOSFET
SI _rLI- BLLU D1 N-Ch P-Ch
G1 T2 l 7W D1
S2 Ere'- 6:11: D2 Voss 30V -30V
G2 IIE 4 SEE] D2
P-CHANNEL MOSFET RDS(on) 0.10f2 0.25f2
Top View
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Package Standard Pack EOL
Base part number Orderable part number Type Form Quantity Notice Replacement Part Number
IRF9952QPbF lRF9952QTHPbF 50-3 Tape and Reel 4000 EOL 529 Please search the EOL part number on IR's website for
IRF9952OPbF $03 Tube 95 EOL 529 guidimsass
Symbol Maximum Units
N-Channel I P-Channel
Drain-Source Voltage Vros 30 V
Gate-Source Voltage Vss , 20
. . TA = 25°C 3.5 -2.3
Continuous Drain Currents
TA = 70°C ID 2.8 -1.8 A
Pulsed Drain Current IDM 16 -10
Continuous Source Current (Diode Conduction) IS 1.7 -1.3
. . . . TA = 25°C 2.0
Maximum Power Dissipation s TA = 70°C Pro 1.3 W
Single Pulse Avalanche Energy EAS 44 57 mJ
Avalanche Current IAR 2.0 -1.3 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TU,TSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient S ROJA 62.5 °C/W
1
10/03/14
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IRF9952QPbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 1ft itl - - V x55 i gt; f: f 225505}
- - - - GS - , D - -
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient t2 I 331: I 1//'C '2','/'/gd',tt, 3;: :3 : -11TnAA
N Ch - 0.08 0.10 Vcs =10V,lo = 2.2A ©
. . . - - 0.12 0.15 VGs=4.5V |D=1.0A@
R Static DraIn-to-Source On-Resistance '
DS(ON) P-Ch - 0.165 0.250 f2 sz = -1ov, ID = -1.0A Cl)
- 0.290 0.400 VGS = -4.5V, ID = -0.50A ©
Vegan) Gate Threshold Voltage 2:3: _11% I I V x: : tt :3 : 'lit)
N-Ch - 12 - VDs=15V,lo= 3.5A©
gfs Forward Transconductance P-Ch - 2.4 - s Vos = -15V, ID = -2.3A ©
N-Ch - - 2.0 Vos = 24V, I/ss = 0V
loss Drain-to-Source Leakage Current 51%: I I ho pA tt : 2330265122), T., = 125''C
P-Ch - - -25 Ws = -24V, VGs = 0V, To = 125''C
less Gate-to-Source Forward Leakage N-P - - A100 nA VCs = 120V
Q T t IG t Ch N-Ch - 6.9 14
g o a a e arge P-Ch - 6 1 12 N-Channel
N-Ch 1.0 2.0 k:o=1.8A,Vros=10V,Vss=10V
Qgs Gate-to-Source Charge P-Ch - 1'7 3'4 nC @
NZCh I 18 3’5 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 1'1 2'2 ID = -2.3A, Vos = -1OV, VGS = -10V
10mm Turn-On Delay Time 2:22 I (y, 1: N-Channel
. . N-Ch - ir', 18 vDD =10V,lo =1.0A,RG = 6.09,
tr Rise Time P-Ch - i2 28 RD = lon
tdestr) Turn-Off Delay Time :12: I g: 2213 P-Channel
vDD = -1ov, ID = -1.0A, Rs = 6.09.
. N-Ch - 3.0 6.0 -
tr Fall Time P-Ch - 6 9 14 RD - 109
_ . N-Ch - 190 - N-Channel
Ciss Input Capacitance P-Ch - 190 - VGS = 0V, Vros = 15V, f = 1.0MH2
Coss Output Capacitance 't2 I 1112i,o I pF P-Channel
Crss Reverse Transfer Capacitance 1(2 - 2 - VGS = OV, Vros = -151/, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Tvp Max. Units Conditions
. . N-Ch - - 1.7
Is Continuous Source Current (Body Diode) P-Ch - - -1 .3 A
. N-Ch - - 16
ISM Pulsed Source Current (Body Diode) co P-Ch - - 16
. N-Ch - 0.82 1.2 V TJ = 25°C, Is = 1.25A, Veg = 0V (3)
VSD Diode Forward Voltage P-Ch - -0.82 -1.2 T: = 25°C, ls = -1.25A, VGS = OV G)
t R R Ti N-Ch - 27 53 ns N-Channel
rr everse emery Ime P-Ch - 27 54 To = 25°C, IF =1.25A, di/dt = 1OOA/ps
N-Ch - 28 57 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 31 62 " T J = 25''C, IF = -1.25A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
© N-Channel Iso S 2.0A, di/dt S 100A/ps, VDD S V(BR)DSS: To S 150°C
P-Channel ISD S -1.3A, di/dt S 84/Ups, VDD f V(BR)DSS, Tu S 150°C
© N-Channel Starting Tu = 25°C, L = 22mH Rs = 259, IAS-- 2.0A. (See Figure 12)
P-Channel Starting To-- 25°C, L = 67mH RG = 259, IAS = -1.3A.
© Pulse width LC 300ps; duty cycle 3 2%.
S Surface mounted on FR-4 board, ts: 10sec.
