IRF9910 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV IR maxDSS DDS(on) Dual SO-8 MOSFET for POL20V Q1 13.4m
IRF9910
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tait Rectifier
Applications VDSS RDS(on) max Ir,
. Dual SO-8 MOSFET for POL
converters in desktop, servers, 20V Q1 13-4mQ@VGS = 10V 10A
graphics cards, game consoles Clit 9-3mQ@VGS = 10V 12A
and set-top box
PD - 95869
IRF9910
HEXFET© Power MOSFET
Benefits
q Very Low RDS(on) at 4.5V VGS 321:- E02
0 Low Gate Charge GZIZ-@[E D2
0 Fully Characterized Avalanche Voltage
and Current SI [3C- 3 D1
0 20V l/ss Max. Gate Rating G1!I- 301
Absolute Maximum Ratings
Parameter 01 Max. I 02 Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t 20
ID © TA = 25°C Continuous Drain Current, Vss © 10V 10 12
ID © TA = 70°C Continuous Drain Current, Vss @ 10V 8.3 9.9 A
lroM Pulsed Drain Current (D 83 98
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
Tu Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 ''C/W
RoJA Junction-to-Ambient @© - 62.5
Notes co through © are on page 10
04/28/04
IRF9910
International
TOR Rectifier
Static © TU = 25''C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 018102 20 - - V Ves = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient Q1 - 0.0061 - NPC; Reference to 25°C, ID = 1mA
Q2 - 0.014 -
Q1 - 10.7 13.4 Veg =10V, lD =10AO
Hosmn) Static Drain-to-Source On-Resistance - 14.6 18.3 mit Vas = 4.5V, ID = 8.3A '31
Q2 - 7.4 9.3 Vas =10V, ID = 12A '31
- 9.1 11.3 Vas = 4.5V, ID = 9.8A \31
Vissuth) Gate Threshold Voltage 018.02 1.65 - 2.55 V Vos = Vas, ID = 250PA
AVasmh/ATo Gate Threshold Voltage Coefficient Q1 - -4.9 - mV/°C
Q2 - -5.0 -
loss Drain-to-Source Leakage Current Q1&02 - - 1.0 PA Vos = 16V, Vas = 0V
Q1802 - - 100 Vos =16V,Ves = 0V, To = 125°C
Isss Gate-to-Source Forward Leakage Q1802 - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage Q1802 - - -100 Vas = -20V
gfs Forward Transconductance Q1 19 - - S Vos = 10V, ID = 8.3A
Q2 27 - - Vos=10V, ID: 9.8A
a, Total Gate Charge 01 - 7.4 11
02 - 15 23
ths, Pre-Vth Gate-to-Source Charge 01 - 2.6 - Q1
02 - 4.3 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge 01 - 0.85 - nC Vss = 4.5V, ID = 8.3A
Q2 - 1.4 -
qu Gate-to-Drain Charge 01 - 2.5 - 02
Q2 - 5.4 - Vos = 10V
and, Gate Charge Overdrive Q1 - 1.5 - Vas = 4.5V, ID = 9.8A
Q2 - 3.9 -
05,, Switch Charge (%ss, + t2o) Q1 - 3.4 -
Q2 - 6.8 -
Qoss Output Charge Q1 - 4.0 - nC Vos = lov, Vss = ov
Q2 - 8.7 -
tam, Turn-On Delay Time Q1 - 6.3 - Q1
Q2 - 8.3 - VDD = 16V, Vss = 4.5V
t, Rise Time 01 - 1O - ID = 8.3A
Q2 - 14 - ns
Imam Turn-Off Delay Time 01 - 9.2 - Q2
Q2 - 15 - VDD = 16V, Vas = 4.5V
t, Fall Time Q1 - 4.5 - ID = 9.8A
Q2 - 7.5 - Clamped Inductive Load
C.SS Input Capacitance Q1 - 900 -
Q2 - 1860 - Vas = 0V
cu, Output Capacitance Q1 - 290 - pF Vos = 10V
02 - 600 - f = 1.0MHz
Crss Reverse Transfer Capacitance Q1 - 140 -
Q2 - 310 -
Avalanche Characteristics
Parameter Typ. 01 Max. 02 Max. Units
EAS Single Pulse Avalanche Energy l - 33 26 mJ
IAR Avalanche Current I - 8.3 9.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current Q18O2 - - 2.5 A MOSFET symbol _ D
(Body Diode) showing the (" :7}
ISM Pulsed Source Current Q1 - - 83 A integral reverse GQW’
(Body Diode) I 02 - - 98 p-n junction diode. '7' s
VSD Diode Forward Voltage Q1 - - 1.0 V To = 25''C, IS = 8.3A, Ves = 0V 3
02 - - 1.0 To = 25''C, Is = 9.8A, Vss = 0V 3
trr Reverse Recovery Time Q1 - 11 17 ns OI To = 25°C, V = 8.3A,
02 - 16 24 VDD = 10V, di/dt = 100A/ps 3
0,, Reverse Recovery Charge Q1 - 3.1 4.7 n0 Q2 To = 25°C, IF = 9.8A,
02 - 4.9 7.3 VDD = 10V, di/dt = 100A/ps 3
