IRF9640STRL ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9910 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV IR maxDSS DDS(on) Dual SO-8 MOSFET for POL20V Q1 13.4m
IRF9640S-IRF9640STRL
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
[International
1:212 Rectifier
HEXFET® Power MOSFET
o Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
q Repetitive Avalanche Rated
0 P-Channel
o Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.921
IIRF9640S
on-resistance and cost-effectiveness.
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-22O
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-22O
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vos @ -10 V -1 1
lo © To = 100°C Continuous Drain Current, l/ss @ -10 V -6.8 A
IDM Pulsed Drain Current (IC) -44
Po © To = 25°C Power Dissipation 125 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 1.0 W /° C
Linear Derating Factor (PCB Mount)" 0.025
Vss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 700 ml
IAR Avalanche Current C) -11 A
EAR Repetitive Avalanche Energy C) 13 md
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ, Tsm Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. T Units
Fur Junction-to-Case - - 1 .0
Ram Junction-to-Ambient (PCB mount)" - - 40 “WW
RBJA Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF9640S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage -200 - -. V VGs=OV, Io=-250pA
Ameoss/ATJ Breakdown Voltage Temp. Coefficient - -0.20 - VPC Reference to 25°C, lry=-ImA
RDS(0n) Static Drain-to-Source On-Resistance - - 0.50 Q Ves=-10V, |D=-6.6A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V VDS=VGS, b---25OWA
gis Forward Transconductance 4.1 - - S Vos=-50V, b=-6.6A ©
loss Drain-to-Source Leakage Current - - -100 uA VDS=-200V’ Vss=0V
- - -500 Vios---160V, VGs=OV, TJ=125°C
loss Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage -..- - 100 VGS=20V
Ch, Total Gate Charge - - 44 |D=-11A
Qgs Gate-to-Source Charge -.. - 7.1 no Vos=-160V
di Gate-to-Drain ("Miller") Charge - - 27 VGs=-10V See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 14 - VDD=-100V
t, Rise Time - 43 - ns |D=-11A
tam) Turn-Off Delay Time - 39 - Re=9.1§1
tf Fall Time - 38 - RD=8.BQ See Figure 10 GD
Lo Internal Drain Inductance _ - 4.5 - Senate ttie. , i,',
nH from package siiii-i)
Ls Internal Source Inductance - 7.5 - and center Of
die contact s
Ciss Input Capacitance - 1200 - Ves=0V
Cogs Output Capacitance - 370 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 81 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -l 1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -44 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -5.0 V TJ=25°C, Is=-11A, VGs=OV (4D
trr Reverse Recovery Time - 250 300 ns TJ=25°C, |F=-11A
er Reverse Recovery Charge - 2.9 3.6 no di/dt=100A/lis Ci)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by © [303-11A, di/dts150A/us, VDDSV(BR)Dss,
max. junction temperature (See Figure 11) TJS150°C
© VDD=-50V, starting TJ=25°C, L=8.7mH (ii) Pulse width S 300 us; duty cycle 52%.
Re=259, |A3=-11A (See Figure 12)
