IRF9640PBF ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
PD-9.422B
IRF9640
HEXFET® Power MOSFET
q Dynamic dv/d ..
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ISER
Rectifier
HEXFET® Power MOSFET
. Surface Mount
q Available in Tap ..
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resistance and can dissipate up to 2.0W in a t ..
IRF9910 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV IR maxDSS DDS(on) Dual SO-8 MOSFET for POL20V Q1 13.4m
IRF9640-IRF9640.-IRF9640PBF
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
[International
TOR Rectifier
PD-9.422B
IRF9640
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
o Repetitive Avalanche Rated
o P-Channel
o FastSwitching
0 Ease of Paralleling
tt Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = -200V
Rosen) = D.SOQ
ID=-11A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO420 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves © -10 V -11
ID @ To = 100°C Continuous Drain Current, Ves © -10 V -6.8 A
los, Pulsed Drain Current co -44
Pry © Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
Ves Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy 2 700 mJ
fan Avalanche Current Ci) -11 A
EAR Repetitive Avalanche Energy C) 13 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 be-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units ]
Rac Junction-to-Case - - 1.0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - l °C/W
ReuA Junction-to-Ambient - - 62 I
IRF9640
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Eddhit
Parameter _ Min, Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -200 - - V Vas=OV, ky----250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp, Coefficient - -0.2O - V/°C Reference to 25°C, lp=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.50 n VGs=-10V, ID=-6.6A q)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS=VG5, ID=-250PA
Os Forward Transconductance 4.1 - - S Vos=-50V. ID=-6.6A ©
loss Drain-to-Source Leakage Current - - -100 WA VDs=-200V, l/ss-HN
- - -500 VDs=-160V. VGS=0V, TJ=125°C
itsss Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
09 Total Gate Charge - - 44 lo=-11A
Qgs Gate-to-Source Charge -- - 7.1 DC VDs=-160V
di Gate-to-Drain ("Miller") Charge - - 27 VGs=-10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD=-100V
tr Rise Time - 43 - ns bra-l 1A
tam) Turn-Off Delay Time - 39 - Re=9.1£2
tf Fall Time - 38 - Ro=8.6§2 See Figure 10 ©
Lo Internal Drain Inductance -- 4.5 - 3:21:19 ste. ') D
nH from package iii)
Ls Internal Source Inductance -- 7.5 - Ind center 6t
die contact s
Ciss Input Capacitance - 1200 - Vas=0V
Coss Output Capacitance - 370 - pF VDs=-25V
Crss Reverse Transfer Capacitance - 81 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. , Max. Units Test Conditions
Is Continuous Source Current - - -1 1 MOSFET symbol D
(Body Diode) A showing the real,
ISM Pulsed Source Current - - M4 integral reverse G (ti-f
(Body Diode) C) p-n junction diode. s
Vsn Diode Forward Voltage - - -5.0 V Tu=25oC, [s=-11A, veszov co
trr Reverse Recovery Time - 250 300 ns TJ=25°C, IF='11A
er Reverse Recovery Charge - 2.9 3.6 wc di/dt=100A/gs (g)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=8.7mH
Re=25§2, IAs=-11A (See Figure 12)
C3) Isos-11A, di/dts150A/ps, VDDSV(BR)DSS,
TJS150°C
co Pulse width 5 300 ps; duty cycle 32%.
