IRF9630 ,6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETsInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
Repetitive Aval ..
IRF9630. ,6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETsapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9630PBF ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
Repetitive Aval ..
IRF9630S ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9640 ,11A, 200V, 0.500 Ohm, P-Channel Power MOSFETsInternational
TOR
Rectifier
PD-9.422B
IRF9640
HEXFET® Power MOSFET
q Dynamic dv/d ..
IRF9640. ,11A, 200V, 0.500 Ohm, P-Channel Power MOSFETsapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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IRF9630-IRF9630.-IRF9630PBF
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
tnttemattonall
Isak Rectifier
PD-9.352F
IlRF9630
HEXFET® Power MOSFET
P-Channel
Ease of Paralleling
0 Fast Switching
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, tow
Dynamic dv/dt Rating
Repetitive Avalanche Rated
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo o To = 25°C Continuous Drain Current, Vos @ -10 V -6.5
to @ To = 100°C Continuous Drain Current, Ves © -10 V -4.0 A
[W Pulsed Drain Current co -26
Pro © To = 25°C Power Dissipation 74 W
Linear Dealing Factor 0.59 WPC
Vss Gate-to-Source Voltage :20 V I
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current C) ..6.4 A
EAR Repetitive Avalanche Energy Cl) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T: Operating Junction and ..55 to +150
Tsro Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw_ 10 lbfoin (1.1 N-m)
Thermal Resistance
- Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 1 .7
Recs (3ase-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RHJA Junction-to-Ambient - - 62 _]
“I 2 .- .. .‘
llRF9630
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BFI)DSS Drain-to-Source Breakdown Voltage -200 - - V VGs=0V, |o=-250p.A
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.24 - VPC Reference to 25°C, lrr---1mA
Rosm Static Drain-to-Source On-Resistance - - 0.80 Q VGs=-10V, lir---3.9A ©
I/sam) Gate Threshold Voltage -2.0 - -4.0 V Vos=Vss, lD=-250pA
gis Forward Transconductance 2.8 - - S VDs=-50V, lo=-3.9A ©
. - - -1OO VDs=-200V, VGs=0V
loss Drain-to-Source Leakage Current - - _.500 pA Vos=-160V, I/os-HN, TJ=125°C
less Gate-to-Source Forward Leakage -...r.-. - -100 n A VGS='20V
Gate-to-Source Reverse Leakage - -- 100 Vss=20V
th Total Gite Charge - - 29 ID=-6.5A
Qgs Gate-to-Source Charge - - 5.4 nC VDs=-160V
di Gate-to-Drain ("Miller") Charge - - 15 Vas=-10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 ._. VDD=-100V
tr Rise Time -.... 27 -- ns ID=-6.5A
td(or) Turn-Off Delay Time - 28 - ns--..12n
tr Fall Time - 24 - RD=15§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 68:21:32 ste. ') L;
nH from package GE r,
Ls Internal Source Inductance - 7.5 - Ind center 6t [iii)
die contact s
Ciss Input Capacitance - 700 - l/Gs-r-OV
Coss Output Capacitance - 200 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 40 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -6 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - -26 integral r.everslse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.5 V TJ=25°C, |s=-6.5A, l/ss-MN co
trr Reverse Recovery Time - 200 300 ns Tr--25oC, lra-.-6.5A
G, Reverse Recovery Charge - 1.9 2.9 no di/dt=100A/rts (if)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
Ci) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=17mH
RG=25§2, lAs=-6.SA (See Figure 12)
TJS'I 50°C
© Ist-G.SA, di/dts;120A/ws, VDDsiViBn)nss,
© Pulse width sc. 300 ps; duty cycle 32%.
