IRF9620S ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9620STRL ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
EOR Rectifier
PD-9.919
IFlF9620S
HEXFET® Power MOSFET
0 Surface Mount
..
IRF9630 ,6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETsInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
Repetitive Aval ..
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thermal resistance and ..
IRF9630PBF ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
Repetitive Aval ..
IRF9630S ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
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IRF9620S-IRF9620STRL
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
rthssttatittt,tal
TOR Rectifier
HEXFET® Power MOSFET
o Surface Mount
o Available in Tape & Reel
0 Dynamic dv/dt Rating
0 P-Channel
er, Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
The HEXFET technology is the key to International Rectifier’s advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
PD-9.919
IRF9620S
high transconductance and extreme device ruggedness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. ft provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
R. =9]
Parameter Max. Units
lo © Tc = 25°C Continuous Drain Current, Ves @ -10 V -3.5 -
ID @ Tc = 100°C Continuous Drain Current, Vas © -10 V -2.0 A
IDM Pulsed Drain Current Cl) -14
pr, © To = 25°C Power Dissipation 40 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 0.32 W PC
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage :20 V
ILM Inductive Current, Clamp -14 A
dv/dt Peak Diode Recovery dv/dt co ~50 V/ns
TJ, Tsro Junction and Storage Temperature Range ~55 to +150 (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max, Units
Rm Junction-to-Case - - 3.1
FINA Junction-to-Ambient (PCB mount)" - - 40 °C/W
Rm Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF9620S
Electrical Characteristics tii) TJ 'lt 25°C (unless otherwise specified) _
Parameter Min. Typ. Max. Units Test Conditions
V(gmuss Drain-to-Source Breakdown Voltage -200 - - V VGs=0V, lrr---250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.22 - VPC Reference to 25°C, ID=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.5 n VGs=-10V, |D=-1.5A ©
VGS(lh) Gate Threshold Voltage -2.0 -.. -4.0 V Vos=VGs, ID=-250uA
grs Forward Transconductance 1.0 - - S Vos=-50V. |D=-1.5A ©
loss Drain-to-Source Leakage Current - - -100 “A Vrs=-200V, Vss=OV
- - -500 VDS=~160V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
ch; Total Gate Charge - - 22 ' ID=-4.OA
Qgs Gate-to-Source Charge - - 12 NC VDs=-160V
di Gate-to-Drain ("Miller") Charge - - 10 Vss=-10V See Fig, 6 and 12 ©
td(on) Turn-On Delay Time - 15 - Voo=-100V
tr Rise Time - 25 - ns ID=-1.5A
tam") Turn-Off Delay Time - 20 - Re:SOQ
t, Fall Time - 15 -..r_ RD:67Q See Figure 10 OD
Lo Internal Drain Inductance - 4.5 - ttt11g"('J.lti'nd.') cj,
nH from package egg}:
Ls Internal Source Inductance - 7.5 - Ind center df f
die contact s
Ciss Input Capacitance - 350 - Ves=0V
Cass Output Capacitance - 100 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
ls Continuous Source Current - - -3.5 MOSFET symbol D
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - -14 integral reverse G :1.
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - ..7.0 V TJ=2500, ls=-3.5A, VGs=0V ©
trr Reverse Recovery Time - 300 450 ns TJ=25°C, Ip=-3.5A
Orr Reverse Recovery Charge - 1.9 2.9 PC dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Not Applicable
TJS150°C
C3) Isos-3.5A, di/dt595A/ps, VDDSV(BR)Dss,
Ci) Pulse width C 300 us; duty cycle 52%.
