IRF9620 ,3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFETlnternati
IEER
onal
Rectifier
PD-9.351 F
IRF9620
HEXFET® Power MOSFET
. Dynami ..
IRF9620. ,3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFETapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9620PBF , HEXFET Power MOSFET
IRF9620S ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9620STRL ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
EOR Rectifier
PD-9.919
IFlF9620S
HEXFET® Power MOSFET
0 Surface Mount
..
IRF9630 ,6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETsInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
Repetitive Aval ..
ISL6252AHAZ , Highly Integrated Battery Charger Controller for Notebook Computers
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ISL6253HAZ ,Highly Integrated Battery Charger for Notebook Computersfeatures. See JATech Brief TB379.5. θ is measured with the component mounted on a high effective th ..
ISL6253HRZ ,Highly Integrated Battery Charger for Notebook ComputersFeaturesNotebook Computers• ±0.5% Voltage Accuracy The ISL6253 is a highly integrated battery charg ..
ISL6255AHRZ-T , Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers
ISL6255AHRZ-T , Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers
IRF9620-IRF9620.
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
mtettatiipg,,tall _ mew
I491 Rectifier . IRF9620
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 P-Channel D -
0 Fast Switching VDSS - -200V
0 Ease of Paralleling
tt Simple Drive Requirements
RDS(on) Te. 1.59
s In = -3.5A
Description
The HEXFET technology is the key to International Rectifier’s advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Ves @ -10 V -3.5
lo © To = 100°C Continuous Drain Current, Ves @ ~10 V -2.0 A
IDM Pulsed Drain Current Co -14
PD © To Ct' 25°C Power Dissipation . 40 W
Linear Derating Factor 0.32 WPC
Vos Gate-to-Source Voltage :20 V
ILM Inductive Current, Clamp -14 A
dv/dt Peak Diode Recovery dv/dt © A5.0 V/ns
To Operating Junction and -55 to +150
Tam Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 3.1
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IF1F9620 , (POR
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter C Min, Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage ..200 - - V VGs=0V, ID=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp, Coefficient - -0.22 - VPC Reference to 25°C, lo=-1mA
HDS(on) Static Drain-to-Source On-Resistance - - 1.5 Q Ves=-10V, ID=-1.5A ©
VGS(1h) Gate Threshold Voltage -2.0 - -4.0 V Vos=Vss, Io=-250pA
gis Forward Transconductance 1.0 -...- - S VDs=-50V, |D=-1.5A G)
. - - -100 Vos=-200V, I/ss-HN
loss Drain-to-Source Leakage Current - - -500 WA Vos=-160V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - --- -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
_ th Total Gate Charge - - 22 lir---4.0A
Qgs Gate-to-Source Charge - - 12 " Vos=-160V
qu Gate-to-Drain ("Miller") Charge -- - 10 VGs=-10V See Fig. 11 & 18 ©
tum Tum-On Delay Time - 15 - VDD=-100V
tr Rise Time - 25 - n s kr=-1.5A
tam) Tu m-Off Delay Time - 20 - Re:SOQ
lt Fall Time - 15 - Ro=67Q See Figure 17 ©
Lo Internal Drain Inductance A - 4.5 - tti,)tt,vri'i1.liitiand,') t)
NH from package GE
Ls Internal Source inductance - 7.5 - and center 6f 'i)
die contact s
Ciss Input Capacitance - 350' - l/ss-HN
Cass Output Capacitance - 100 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 10
'Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -3 5 MOSFET symbol C)
(Body Diode) . A showing the 1"}
[SM Pulsed Source Current - - ..1 4 integral reverse G :1;
(Body Diode) (i) pen junction diode. s
Van Diode Forward Voltage - - -7.0 V TJ=25°C, ls=-3.5A, Ves=0V (4CY
tn Reverse Recovery Time - 300 450 ns TJ=25°C, lp=-3.5A
er Reverse Recovery Charge - 1.9 2.9 wc dildt=100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes: F
C) Repetitive rating; pulse width limited by C3) Isos-3.5A, di/dem/Ups, VDDSV(BR)DSS,
max. junction temperature (See Figure 5) TJs150°C
© Not Applicable © Pulse width s. 300 us; duty cycle 32%.
