IRF9610STRL ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9620 ,3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFETlnternati
IEER
onal
Rectifier
PD-9.351 F
IRF9620
HEXFET® Power MOSFET
. Dynami ..
IRF9620. ,3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFETapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9620PBF , HEXFET Power MOSFET
IRF9620S ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9620STRL ,-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
EOR Rectifier
PD-9.919
IFlF9620S
HEXFET® Power MOSFET
0 Surface Mount
..
ISL6251HAZ , Low Cost Multi-Chemistry Battery Charger Controller
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ISL6252AHAZ , Highly Integrated Battery Charger Controller for Notebook Computers
ISL6253HAZ ,Highly Integrated Battery Charger for Notebook ComputersApplicationsISL6253HRZ -10 to 100 28 Ld 5x5 QFN L28.5x5• Notebook, Desknote and Sub-notebook Comput ..
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ISL6253HRZ ,Highly Integrated Battery Charger for Notebook ComputersFeaturesNotebook Computers• ±0.5% Voltage Accuracy The ISL6253 is a highly integrated battery charg ..
IRF9610S-IRF9610STRL
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
International
Them Rectifier
HEXFET® Power MOSFET
o Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
o P-Channel
0 Fast Switching
0 Ease of Paralleling
o Simple Drive Requirements
Description
The HEXFET technology is the key to International Rectifier’s advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
PD-9.918
IRF9610S
high transconductance and extreme device ruggedness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, I/ss @ -10 V -1.8
In @ Tc = 100°C Continuous Drain Current, VGS @ -10 V -1.0 A
IDM Pulsed Drain Current co -7.0
PD © To = 25°C Power Dissipation 20 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 0.16 W /o C
Linear Derating Factor (PCB Mount)" 0.025
Vas Gate-to-Source Voltage i20 V
ILM Inductive Current, Clamp T -7.0 A
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ, Tam. Junction and Storage Temperature Range -55 to +150 '00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - - 6.4
RNA Junction-to-Ambient (PCB mount)" - - 40 °C/W
Fla, Junction-to-Ambient - - 62
** When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques referto application note #AN-994.
n. A.- 43......_____,.,..
lRF9610S
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -200 - - V I/ss-HN, b=-250PA
AVoR)ioss/ATo Breakdown Voltage Temp. Coefficient - -0.23 - VPC Reference to 25°C, lo=-1mA
Ros(on) Static Drain-to-Source On-Resistance --.. - 3.0 Q VGs=~10V, lo=-0.90A C4)
VGS(Ih) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, Iry--.-250pA
gm Forward Transconductance 0.90 - - S VDs=-50V, ID=-0.90A ©
loss Drain-to-Source Leakage Current - - -100 WA Vos=-2OOV, VGS=0V
...-.r.. - -500 VDs=-160V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 Vss=20V
th Total Gate Charge - - 11 |D=~3.5A
Qgs Gate-to-Source Charge - - 7.0 nC Vos=-160V
di Gate-to-Drain ("Miller") Charge - - 4.0 VGs=-10V See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 8.0 - Voo=-100V
t, Rise Time - 15 - n s |D=-0.90A
tum) Turn-Off Delay Time - 10 - Re:SOQ
t! Fall Time - 8.0 - HD=11OQ gee Figure 10 l)
u, Internal Drain Inductance - 4.5 - (htt7,] ltilnd,')
nH from package egg)
Ls Internal Source Inductance - 7.5 - and center bf pig
die contact
Ciss Input Capacitance - 170 - VGs=0V
Coss Output Capacitance -- 50 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -1 8 MOSFET symbol D
(Body Diode) . A showing the [i-si)
ISM Pulsed Source Current - - -7.0 inte.gral reverge tii-i--]
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - -5.8 V TJ=25°C, Is=-1.8A, Ves=0V ©
tn Reverse Recovery Time - 240 360 ns TJ=25°C, lF=-1.8A
er Reverse Recovery Charge - 1.7 2.6 no di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) Not Applicable
© lsDS-1,8A, di/dts70A/us, VDDSV(BR)DSS,
TJS150°C
a) Pulse width f 300 118; duty cycle 52%.
