IRF9540S ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
RectifierIRF9540S
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
q P-Channel
q Fast ..
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9610. ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9610PBF , HEXFET POWER MOSFET ( VDSS=-200V , RDS(on)=3.0Ω , ID=-1.8A )
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IRF9540S
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Ilnternational
IOR Rectifier
PD - 9.917A
IRF9540S
HEXFET© Power MOSFET
q Surface Mount
0 Available in Tape & Reel
. Dynamic dv/dt Rating VDss = -100V
. Repetitive Avalanche Rated 2
o P Channel RDS(on) = 0.209
0 175°C Operating Temperature
0 Fast Switching ID = -19A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die R /
sizes up to HEX-4. l provides the highest power capability and the lowest g
possible on-resistance in any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application. SMD-220
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, Vss @ -10V -19
ID @ Tc =100''C Continuous Drain Current, Vss @ -10V -13 A
IDM Pulsed Drain Current OD -72
PD@TC = 25°C PowerDissipation 150
Pro @Tc = 25°C Power Dissipation (PCB Mount)" 3.7 W
Linear Derating Factor 1.0
Linear Derating Factor (PCB Mount)" 0.025 W/OC
Vcs Gate-to-Source Voltage -+20 V
EAS Single Pulse Avalanche Energy © 640 mJ
IAR AvalancheCurrent C) -19 A
EAR Repetitive Avalanche Energy© 15 mJ
dv/dt Peak Diode Recoverydv/dt© -5.5 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 175 o
Soldering Temperature,ror10seconds 300 (1 .6mm from case) C
Thermal Resistance
Parameter Min. Typ. Max. Units
Reuc Junction-to-Case - - 1 .0 (
ROUA Junction-to-Ambient (PCB Mount)" - - 40 "C/W
" When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
3/21/03
IR F954OS
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(amoss Drain-to-Source Breakdown Voltage -100 - - V Vss=OV, |D=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.087 - VPC Reference to 25°C, |o=-1mA
Roam) Static Drain-to-Source On-Resistance - - 0.20 n Vas=-10V, Io=-11A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, b=-250PA
gis Forward Transconductance 6.2 - - S Vos=-50V, |D=-11A ©
loss Drain-to-Source Leakage Current - - -100 p1A VDs=-100V, Nas-UN
- - -500 VDs=-80V, Var=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Vos=20V
cl, Total Gate Charge - - 61 |D=-19A
Qgs Gate-to-Source Charge - - 14 n0 Vos=-8OV
di Gate-to-Drain ("Miller") Charge - - 29 VGs=-1OV See Fig. 6 and 13 ©
tdpn) Turn-On Delay Time - 16 - VDD=~50V
tr Rise Time - 73 - ns b=-19A
tum") Turn-Off Delay Time - 34 - Rs=9Af2
it Fall Time - 57 - RD=2.4Q See Figure 10 ©
Lo Internal Drain Inductance L.-. 4.5 - g '2)"/J. ate, ') |_g‘3
nH from package (3ng
Ls Internal Source Inductance - 7.5 - Ind center of f
die contact s
Ciss Input Capacitance - 1400 - VGs=0V
Coss Output Capacitance - 590 - pF Vros=-251/
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -1 9 MOSFET symbol D
(Body Diode) A showing the 'r-c-r,,
ISM Pulsed Source Current - - -72 integral reverse G (Li''
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - -5.0 V TJ=25°C, ls=-19A, Ves=0V @
tn Reverse Recovery Time - 130 260 ns Tr--2tPC, IF=-19A
er Reverse Recovery Charge - 0.35 0.70 PC di/dt=100A/rs Cs)
ton Forward Tum-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=2.7mH
Re=25§2, IAS=-19A (See Figure 12)
© Isos-19A, di/dt
TJS175°C
© Pulse width s: 300 us; duty cycle 32%.
