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IRF9540N-IRF9540N.-IRF9540NPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91437B
International
Tart, Rectifier RF9540N
HEXFET© Power MOSFET
Advanced Process Technology D
Dynamic dv/dt Rating VDSS = -100V
175°C Operating Temperature
Fast Switching , v =
P-Channel G RDS(on) 0.117n
Fully Avalanche Rated
ID = -23A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrialapplications atpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -23
ID @ Tc = 100°C Continuous Drain Current, Vss @ -10V -16 A
IDM Pulsed Drain Current (O -76
Po @Tc = 25''C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 430 mJ
IAR Avalanche CurrentC) -11 A
EAR Repetitive Avalanche Energy© 14 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1 Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRF9540N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.11 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.117 Q VGS = -10V, ID = -11A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gts Forward Transconductance 5.3 - - S Vos = -50V, lo = -11A
loss Drain-to-Source Leakage Current - - -25 pA Vros = -100V, VGS = 0V
- - -250 Vros = -80V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 97 ID = -1 IA
Qgs Gate-to-Source Charge - - 15 nC v.33 = -80V
di Gate-to-Drain ("Miller") Charge - - 51 V93 = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 15 - VDD = -50V
tr Rise Time - 67 - ID = -11A
tum Turn-Off Delay Time - 51 - ns Rs = 5.19
tf Fall Time - 51 - Ro = 4.29, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between le"': f D
nH 6mm (0.25m.) GALE
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1300 - l/ss = 0V
Cass Output Capacitance - 400 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current - - -23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - -76 p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V To = 25°C, ls = -11A, VGS = 0V ©
trr Reverse Recovery Time - 150 220 ns TJ = 25°C, IF = -11A
G, Reverse RecoveryCharge - 830 1200 nC di/dt = -100Alus ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Ftg. 11 )
© Starting TJ = 25°C, L = 7.1mH
Rs = 259, IAS-- -11A. (See Figure 12)
© ISD S -11A, di/dt S -470A/ps, I/oo S V(BR)DSS:
TJ S 175°C
G) Pulse width S 300ps; duty cycle S 2%.
