IRF9540 ,19A, 100V, 0.200 Ohm, P-Channel Power MOSFETsInternational
IQR
Rectifier
PD-9.421 C
llRF9540
HEXFET? Power MOSFET
Dynamic dv/d ..
IRF9540N ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91437BIRF9540N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = -100 ..
IRF9540N. ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF9540NPBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF9540NSPBF , HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )
IRF9540NSTRLPBF , Advanced Process Technology
ISL6237IRZ-T , High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers
ISL6237IRZ-T , High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers
ISL62392HRTZ , High-Efficiency, Triple-Output System Power Supply Controller for Notebook Computers
ISL62392HRTZ , High-Efficiency, Triple-Output System Power Supply Controller for Notebook Computers
ISL6244CR ,Multi-Phase PWM ControllerFeaturesThe ISL6244 provides core-voltage regulation by driving 2 to • Multi-Phase Power Conversion ..
ISL6244CRZ ,Multi-Phase PWM ControllerApplicationsseparate supply.• AMD Hammer Family Processor Voltage RegulatorSuperior over-voltage pr ..
IRF9540-IRF9540PBF
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
nternati
1:212 Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt
P-Channel
Fast Switching
Description
Third Generation H EXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Repetitive Avalanche Rated
175°C Operating Temperature
Ease of Paralleling
Simple Drive Requirements
PD-9.421C
IRF9540
Rating
D Voss = -100V
V RDS(on) = 0.209
S ID = -19A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute tojts wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
Parameter Max. Units
19 © To = 25°C Continuous Drain Current, Vas @ -10 V -19
lo @ To = 100°C Continuous Drain Current, Ves @ -10 V ~13 A
IDM Pulsed Drain Current (D -72
Po @ To Td." 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
Vas Gate-to-Source Voltage i20 V
EAs Single Pulse Avalanche Energy © 640 mJ
IAFl Avalanche Current (I) -19 A
EAR Repetitive Avalanche Energy (tC) 15 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbbin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redc Junction-to-Case - - 1 .0
Race Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Fla, Junction-to-Ambient - - 62
IRF9540
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
G) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=-25V, starting TJ=25°C, L=2.7mH
Re=25f2, IAs----19A (See Figure 12)
Parameter Min. Typ. Max. Units Test Conditions
_ V(BR)DSS _ Drain-to-Source Breakdown Voltage -100 - - V Vss=OV, lo=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.087 - V/°C Reference to 25°C, lo=-1mA
Roam) Static Drain-to-Source On-Resistance - .._ 0.20 n Vas=-10V, ID=-11A (4)
Vegan) Gate Threshold Voltage -2.0 - 34.0 V Vos=VGs, |o=-25011A
ge, Forward Transconductance 6.2 - - S VDs=-50V, Io=-11A co
loss Drain-to-Source Leakage Current - - -100 WA VDs---100V, Vtss=0V
- - -500 Vos=-80V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V I
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Clg Tbtal Gate Charge - - 61 ID=-19A
Qgs Gate-to-Source Charge - - 14 n0 VDs=-80V
di Gate-to-Drain ("Miller") Charge - - 29 Ves=-1OV See Fig. 6 and 13 ©
Mon) Turn-On Delay Time - 16 - VDD=-50V
tt Rise Time - 73 - n s ID=-19A
tam Turn-Off Delay Time - 34 - Ra=9.1f2
tt Fall Time - 57 - RD=2.4Q See Figure 10 co
La Internal Drain Inductance -- 4.5 - , '2(rl/l tie. ') £3
_ nH from package 66%
Ls Internal Source Inductance - 7.5 - and center 6f Flé
die contact s
Ciss Input Capacitance - 1400 - I/ss-HN
Coss Output Capacitance - 590 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - -- -1 9 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - --. -72 integral reverse G
(Body Diode) (i) p-n junction diode. S
Van Diode Forward Voltage - - -5.0 V TJ=25°C, Is=-19A, VGs=0V ©
trr Reverse Recovery Time - 130 260 ns TJ=25°C, IF=-19A
G, Reverse Recovery Charge - 0.35 0.70 no di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominatedhy Ls+LD)
Notes:
© Isos-19A, di/de200A/ps, VDDSWBmoss,
TJS175°C
GD Pulse width ff 300 us; duty cycle S2%.
