IRF9520NPBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
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IRF9520NPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
miRRectifier
PD - 95411
IRF9520NPbF
HEXFET© Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
VDSS = -100V
RDSW) - 0.489
s ID = -6.8A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levelsto approximately 50watts. Thelowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ -10V -6.8
ID @ To = 100°C Continuous Drain Current, VGS @ -1OV -4_8 A
IDM Pulsed Drain Current (D -27
PD @Tc = 25''C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 140 mJ
IAR Avalanche Current© -4.0 A
EAR Repetitive Avalanche Energy0) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 1O lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 3.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
06/ 1 5/04
IRF9520NPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -100 - - V VGs = 0V, ID = -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - -0.1O - V/''C Reference to 25°C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.48 Q Vss = -10V, ID = -4.0A G)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vns = Vcs, ID = -250pA
gfs Forward Transconductance 1 .4 - - S VDs = -50V, ID = -4.0A
loss Drain-to-Source Leakage Current - - -25 pA Vos = -100V, VGS = 0V
- - -250 Vos = -80V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - .--- 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 27 ID = -4.0A
Qgs Gate-to-Source Charge - - 5.0 nC Vros = -80V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD = -50V
tr Rise Time - 47 - ID = -4.0A
tdist) Turn-Off Delay Time - 28 - ns Rs = 22n
tt Fall Time - 31 - Ro = 129, See Fig. 10 (D
LD Internal Drain Inductance - 4.5 - Between tad: D
nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 350 - Vss = 0V
Coss Output Capacitance - 110 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -6.8 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - -27 p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V Tu = 25°C, Is = -4.0A, Ves = 0V ©
trr Reverse Recovery Time - 100 150 ns Tu = 25°C, IF = -4.0A
Qrr Reverse RecoveryCharge - 420 630 nC di/dt = -100A/ps (D
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25''C, L = 18 mH
Rs = 259, IAS-- -4.0A. (See Figure 12)
T J f 175''C
© Pulse width f 300ps; duty cycle 3 2%.
© ISD S -4.0A, di/dt S -300/Ups, VDD S V(BR)DSS:
