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IRF9520NL-IRF9520NS
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
PD-91522A
IRF9520NS/L
HEXFET® Power MOSFET
o Advanced Process Technology D
0 Surface Mount (IRF9520S) VDSS = -100V
. Low-profil/ugh-hole-ll-)
o 175°C Operating Temperature : kg RDSW) = 0.489
. Fast Switching
o P-Channel ID = -6.8A
0 Fully Avalanche Rated s
Description
Fifth Generation HEXFETs from International Rectferutilize
advanced processing techniques to achieve extremely low
on-resistance persilicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designerwith an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes upto HEX-4. It provides the highest
power capability and the lowest possible on-resistance in D 2 Pak T0262
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ -10VS -6.8
ID @ Tc = 100°C Continuous Drain Current, Ves @ -10VS -4.8 A
IDM Pulsed Drain Current cos -27
PD @TA = 25°C Power Dissipation 3.8 W
Pro @To = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/''C
Ves Gate-to-Source Voltage i 20 V
EN; Single Pulse Avalanche EnergyOS 140 m]
IAR Avalanche Current0) -4.0 A
EAR Repetitive Avalanche Energy0) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 3.1 °C/W
RwA Junction-to-Ambient ( PCB Mounted,steady-state)** - 4O
5/13/98
IRF9520NS/L International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGs = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient _.-. -0.10 - V/°C Reference to 25°C, ID = -1mA©
Roam) Static Drain-to-Source On-Resistance - - 0.48 n VGS = 10V, ID = -4.0A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vros = VGs, ID = -250pA
Ts Forward Transconductance 1.4 - - S Vros = -50V, ID = -4.0AS
loss Drain-to-Source Leakage Current - - -25 pA Vros = -100V, VGS = 0V
- - -250 Vos = -80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Q9 Total Gate Charge - - 27 ID = -4.0A
Qgs Gate-to-Source Charge - - 5.0 nC Ws = -80V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = -10V, See Fig. 6 and 13 ©S
tdon) Turn-On Delay Time - 14 - VDD = -50V
tr RiseTime - 47 - ID = -4.OA
tdmm Turn-Off Delay Time - 28 - ns Rs = 22n
tf FallTime - 31 - RD = 129, See Fig. 10 (96)
Ls Internal Source Inductance - 7.5 - nH Between lead,-
and center of die contact
Ciss Input Capacitance - 350 - VGS = 0V
CosS Output Capacitance - 110 - pF Vos = -251/
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -6 8 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - -27 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V TJ = 25°C, Is = -4.0A, VGS = 0V (D
trr Reverse Recovery Time - 100 150 ns T: = 25°C, IF = -4.0A
Qrr Reverse Recovery Charge - 420 630 nC di/dt = -100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%
max. junction temperature. ( See Fig. 11 )
© Starting TJ = 25°C, L = 18mH © Uses IRF9520N data and test conditions
Rs = 259, IAS = -4.0A. (See Figure 12)
© ISD S -4.0A, di/dt S -300A/ps, VDD S V(BR)ross,
T J f 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
