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IRF9520
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
IRF9520
6A, 100V, 0.600 Ohm, P-Channel Power
MOSFETThis advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Features 6A, 100V
DS(ON)
= 0.600 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Symbol
Packaging
JEDEC TO-220AB
Ordering InformationNOTE: When ordering, use the entire part number.
