IRF9510STRL ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9510STRR ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF9520 ,6A, 100V, 0.600 Ohm, P-Channel Power MOSFETFeaturesMOSFET• 6A, 100VThis advanced power MOSFET is designed, tested, and = 0.600Ω•rDS(ON)guaran ..
IRF9520N ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermal resistance TO-2 ..
IRF9520NL ,-100V Single P-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF9520NPBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
ISL6227CAZ ,Dual Mobile-Friendly PWM Controller with DDR OptionISL6227®Data Sheet March 2004 FN9094.1Dual Mobile-Friendly PWM Controller with
ISL6227CAZ-T ,Dual Mobile-Friendly PWM Controller with DDR OptionISL6227®Data Sheet March 2004 FN9094.1Dual Mobile-Friendly PWM Controller with
ISL6227HRZ , Dual Mobile-Friendly PWM Controller with DDR Option
ISL6227IRZ , Dual Mobile-Friendly PWM Controller with DDR Option
ISL6235 ,PWM Controller, Triple Linear and Dual PWM, 5.6 to 24V Input, Outputs +5/+3.3V ALWAYS and +5V/+3.3V Main, +12V, Notebook PCsapplications. The IC integrates -+5V Mainthree fixed frequency pulse-width-modulation (PWM) - +3.3V ..
ISL6235CA ,Advanced Triple PWM Only Mode and Dual Linear Power Controller for Portable ApplicationsISL6235TMData Sheet June 2001 FN9029Advanced Triple PWM Only Mode and
IRF9510S-IRF9510STRL-IRF9510STRR
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
ntettyiatip,tyig
149R Rectifier
HEXFET® Power MOSFET
o Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
0 P-Channel
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.914
|RF951OS
Voss = M00V
RDS(on) = 1.29
ir, = M.0A
on- -resistance and cost-effectiveness,
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ -10 V -4.0
In @ To = 100°C Continuous Drain Current, Vas @ -10 V -2.8 A
IDM Pulsed Drain Current (D ..16
Po a Tc .c.T 25°C Power Dissipation 43 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.29 W P C
Linear Derating Factor (PCB Mount)" 0.025
Veg Gate-to-Source Voltage $20 V
EAS I Single Pulse Avalanche Energy © 200 md
IAH Avalanche Current OD -4.0 A
EAR Repetitive Avalanche Energy (i) 4.3 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 T V/ns
To, Tsm Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. U/its
Rax; Junction-to-Case - - 3.5
Ras Junction-to-Ambient (PCB mount)" - - 40 °C/W
Rem Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques referto application note #AN-994.
llRF9510S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=18mH
RG=259, IAs=-4.0A (See Figure 12)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage -1OO - - V VGS=0V, lo=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -.r.- -0.091 - V/°C Reference to 25°C, lo=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.2 Q Ves=-1OV, |D=-2.4A ©
_ VGS(lh) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, Irr=-250pA
grs Forward Transconductance 1.0 - - S VDs=-50V. ID=-2.4A ©
. - - -100 Vros=-1 00V, VGs=0V
loss Drain-to-Source Leakage Current - _ -500 IIA Vos=-80V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Qg Total Gate Charge - - 8.7 ID=-4.0A
Qgs Gate-to-Source Charge - - 2.2 nC Vos=-80V
di Gate-to-Drain ("Miller") Charge - - 4.1 VGs=-10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - IO - VDD=-50V
tr Rise Time - 27 - ns lo=-4.0A
tam Turn-Off Delay Time - 15 - Rs=24n
t, Fall Time -- .17 - RD=11Q See Figure 10 ©
Lo Internal Drain Inductance .- 4.5 - tit,1r(tlti1nd.') D
nH from package 6@
Ls .lnternal Source Inductance - 7.5 -. Ind center df
die contact s
Ciss Input Capacitance - 200 - Vss=OV
Coss Output Capacitance - 94 - pF VDs=-25v
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
Is Continuous Source Current - - M 0 MOSFET symbol C)
(Body Diode) . A showing the [,-,,-,Ir.
ISM Pulsed Source Current - _ -16 integral reverse G :1."
(Body Diode) (D p-n junction diode. s
Vso Diode Fon/vard Voltage - - -5.5 V TJ=250C, ls=-4.0A, VGs=0V ©
tn Reverse Recovery Time - 82 160 ns TJ=25°C, IF=-4.OA
thr Reverse Recovery Charge - 0.15 0.30 PC di/dt=100A/rs (9
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
© lsDri-4.0A, di/dts75A/ws, VDDSVaaRpss,
TJS175°C
© Pulse width s: 300 ps; duty cycle 32%.
