IRF9510 ,3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFETInternational
TOR
Rectifier
PD-9.390D
IRF9510
HEXFET8 Power MOSFET
q Dynamic dv/d ..
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IRF9510S ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.914
International
EOR Rectifier IFlF9510S
HEXFET® Power MOSFET
q Surface Mount
0 ..
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ISL6235 ,PWM Controller, Triple Linear and Dual PWM, 5.6 to 24V Input, Outputs +5/+3.3V ALWAYS and +5V/+3.3V Main, +12V, Notebook PCsapplications. The IC integrates -+5V Mainthree fixed frequency pulse-width-modulation (PWM) - +3.3V ..
IRF9510
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
PD-9.390D
IRF9510
Irtter,tatiipE,tall
IeaR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated D
0 P-Channel
o 175°C Operating Temperature
Fast Switching
q Ease of Paralleling
0 Simple Drive Requirements
Voss = -1001/
RDS(on) = 1.29
s ID Ti,",.' -4.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts, The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry,
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vas @ -10 V -4.0
In © To = 100°C Continuous Drain Current, Veg @ -10 V -2.8 A
IDM Pulsed Drain Current 65 -16
Po © To = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 W/°C
VGs Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy C2) 200 mJ
IAR Avalanche Current C) -4.0 A
EAR Repetitive Avalanche Energy C) 4.3 mJ
dv/dt Peak Diode Recovery dv/dt © .45.5 , V/ns
T: Operating Junction and -55 to +175 I
Jere Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbhin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 3.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IRF9510
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max, Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V I/ss-MN, |o=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -..- -0.091 - VPC Reference to 25°C. b=-1mA
Roam) Static Drain-to-Source On-Resistance - ....- 1.2 Q l/ss-z-IOM, ID=-2.4A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, loz-ZSOpA
gts Forward Transconductance 1.0 - - S Vns=-50V, Io=-2.4A ©
loss Drain-to-Source Leakage Current - - -100 TIA Vos-lov, Vas-HN
- - -500 Vos=-8OV, 1has=OV, TJ=150°C
lass Gate-io-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
th Total Gate Charge - - 8.7 kr=-4.0A
Qgs Gate-to-Source Charge - - 2.2 no Vos=-80V
di Gate-to-Drain ("Miller") Charge - - 4.1 Ves=-1OV See Fig. 6 and 13 ©
td(0n) Tu m-On Delay Time - 10 - VDD=-5OV
tr Rise Time - 27 - n s |D=-4.0A
mum) Turn-Off Delay Time - 15 - Fltr=24n
ti Fall Time - 17 - RD=11Q See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - 2:21:16 gag ') c-nl
nH from package SQ}
Ls Internal Source Inductance - 7.5 - and center 6f
die contact 3
Ciss Input Capacitance - 200 - Ves=0V
Cass Output Capacitance - 94 -..r.- pF Vos=-25V
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Sourte-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -4 0 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - -16 integral reverse G
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - -5.5 V TJ=25°C, Is=-4.0A, Ves=0V g)
trr Reverse Recovery Time - 82 160 ns TJ=25°C, |F='4.0A
G, Reverse Recovery Charge - 0.15 0.30 ptC di/tita--100A/ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=-25V, starting TJ=25°C, L=18mH
RG=259, |As=-4.0A (See Figure 12)
© Isos-4.0A, di/dts75A/ps, VDDSV(BR)DSS,
TJS175°C
© Pulse width 3 300 M; duty cycle 32%.
