IRF9410TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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IRF9410TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
:rartRectifier
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
0 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With theseimprovements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
PD - 95260
RF941 O PbF
HEXFET® Power MOSFET
SDI‘ 8 D
SD12 _ 7EEDD VDSS = 30V
SD13 " 5D]: D
G D14 SIDE D RDS(on) = 0.030Q
Top View
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V03 30 V
Gate-Source Voltage Vss i 20
Continuous Drain Currents TA = 25 C In 7.0
TA = 70°C 5.8 A
Pulsed Drain Current IDM 37
Continuous Source Current (Diode Conduction) ls 2.8
. . . . TA = 25°C 2.5
Maximum Power Dissipation s TA = 70''C PD 1.6 W
Single Pulse Avalanche Energy © EAS; 70 mJ
Avalanche Current IAR 4.2 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 V/ ns
Junction and Storage Temperature Range Tu, TSTG -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient © ReJA 50 'CIW
1
09/21/04
IRF9410PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, In = 250PA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
- 0.024 0.030 VGS = 10V, ID = 7.0A (9
RDsm Static Drain-to-Source On-Resistance - 0.032 0.040 g Vss = 5.0V, ID = 4.0A C9
0.037 0.050 Vss = 4.5V, ID = 3.5A (D
VGS(th) Gate Threshold Voltage 1 .0 - - V l/ns = VGS, ID = 250pA
9ts Forward Transconductance - 14 - S Vns = 15V, ID = 7.0A
. - - 2.0 V05 = 24V, VGS = 0V
loss Drain-to-Source Leakage Current - - 25 PA VDs = 24V, Ves = 0V, Tu = 55°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - 18 27 ID = 2.0A
Qgs Gate-to-Source Charge - 2.4 3.6 nC VDs = 15V
di Gate-to-Drain ("Miller") Charge - 4.9 7.4 V65 = 10V, See Fig. 10 ©
tum) Turn-On Delay Time - 7.3 15 VDD = 25V
t, Rise Time - 8.3 17 ns ID = 1.0A
tdom Turn-Off Delay Time - 23 46 Rs = 6.09, Vss = 10V
tr Fall Time 17 34 RD = 259 G)
Ciss Input Capacitance - 550 - VGS = 0V
Coss Output Capacitance 260 pF l/ns = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.8 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - 37 p-n junction diode. s
l/sn Diode Forward Voltage - 0.78 1.0 V Tu = 25°C, Is = 2.0A, VGS = 0V ©
trr Reverse Recovery Time - 4O 80 ns Tu = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 63 130 nC di/dt = 1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 6.6mH
Rs = 25Q, IAS = 4.6A.
s Surface mounted on FR-4 board, ts 10sec.
Tu s 150°C
© Pulse width S 300ps; duty cycle 3 2%.
© ISD S 4.6A, di/dtra120A/ps, VDDS V(BR)DSSI
