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IRF9410-IRF9410TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
PRELIMINARY
PD - 9.1562A
IRF94'10
HEXFET® Power MOSFET
VDSS = 30V
L_LLH)
RDS(on) = 0.0309
Top View
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V93 30 V
Gate-Source Voltage VGS * 20
Continuous Drain Currents TA = 25 C lr, 7.0
TA = 70°C 5.8 A
Pulsed Drain Current IBM 37
Continuous Source Current (Diode Conduction) Is 2.8
. . . . TA = 25°C 2.5
Maximum Power Dissipation s TA = 70°C PD 1.6 W
Single Pulse Avalanche Energy © EAS 70 mJ
Avalanche Current IAR 4.2 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient s RNA 50 °CNV
9/15/97
IRF9410
International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - 0.024 - V/°C Reference to 25°C, ID = 1mA
- 0.024 0.030 VGS = 10V, ID = 7.0A GD
RDS(on) Static Drain-to-Source On-Resistance - 0.032 0.040 Q VGS = 5.0V, lry = 4.0A ©
- 0.037 0.050 VGs = 4.5V, ID = 3.5A GD
VGS(th) Gate Threshold Voltage 1.0 - - V Ws = I/ss, ID = 250pA
gfs Forward Transconductance 14 - S VDS = 15V, ID = 7.0A
. - - 2.0 Vos = 24V, VGS = 0V
loss Drain-to-Source Leakage Current - - 25 HA VDS = 24V, I/ss = 0V, T: = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
Qg Total Gate Charge - 18 27 ID = 2.0A
Qgs Gate-to-Source Charge - 2.4 3.6 nC VDS = 15V
di Gate-to-Drain ("Miller") Charge - 4.9 7.4 VGS = 10V, See Fig. 10 ©
tum) Turn-On Delay Time - 7.3 15 VDD = 25V
tr Rise Time - 8.3 17 ns ID = 1.0A
td(off) Turn-Off Delay Time - 23 46 Rs = 6.0n, VGS = 10V
tf Fall Time 17 34 RD = 259 (4)
Ciss Input Capacitance - 550 - Ves = ov
Coss Output Capacitance 260 pF Ws = 25V
Crss Reverse Transfer Capacitance - 100 l - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.8 showing the '—,J
ISM Pulsed Source Current integral reverse G E
(Body Diode) co - - 37 p-n junction diode. s
VSD Diode Forward Voltage - 0.78 1.0 V Tu = 25°C, ls = 2.0A, VGS = 0V ©
trr Reverse Recovery Time - 40 80 ns Tu = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 63 130 nC di/dt = 100A/us ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu-- 25°C, L = 6.6mH
Rs = 25O, IAS = 4.6A.
6) Surface mounted on FR-4 board, t s 10sec.
© ISD S 4.6A, di/dt S 120A/ps, VDD S V(BR)DSSa
T J f 150°C
© Pulse width 3 300ps; duty cycle 3 2%.
